Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44800
標題: Manufacture and Characterization of High Q-Factor Inductors Based on CMOS-MEMS Techniques
作者: Yang, Ming-Zhi
Dai, Ching-Liang
Hong, Jin-Yu
關鍵字: micro inductors;MEMS;high Q-factor
出版社: MDPI, Basel
Project: Sensors, Volume 11, Issue 10, Page(s) 9798-9806.
摘要: 
A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remove the underlying silicon substrate in order to reduce the substrate loss and to enhance the Q-factor of the inductor. The post-process adopts RIE (reactive ion etching) to etch the sacrificial oxide layer, and then TMAH (tetramethylammonium hydroxide) is employed to remove the silicon substrate for obtaining the suspended spiral inductor. The advantage of this post-processing method is its compatibility with the CMOS process. The performance of the spiral inductor is measured by an Agilent 8510C network analyzer and a Cascade probe station. Experimental results show that the Q-factor and inductance of the spiral inductor are 15 at 15 GHz and 1.8 nH at 1 GHz, respectively.
URI: http://hdl.handle.net/11455/44800
ISSN: 1424-8220
DOI: 10.3390/s111009798
Appears in Collections:機械工程學系所

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