Please use this identifier to cite or link to this item:
|標題:||Manufacture and Characterization of High Q-Factor Inductors Based on CMOS-MEMS Techniques||作者:||Yang, Ming-Zhi
|關鍵字:||micro inductors;MEMS;high Q-factor||出版社:||MDPI, Basel||Project:||Sensors, Volume 11, Issue 10, Page(s) 9798-9806.||摘要:||
A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remove the underlying silicon substrate in order to reduce the substrate loss and to enhance the Q-factor of the inductor. The post-process adopts RIE (reactive ion etching) to etch the sacrificial oxide layer, and then TMAH (tetramethylammonium hydroxide) is employed to remove the silicon substrate for obtaining the suspended spiral inductor. The advantage of this post-processing method is its compatibility with the CMOS process. The performance of the spiral inductor is measured by an Agilent 8510C network analyzer and a Cascade probe station. Experimental results show that the Q-factor and inductance of the spiral inductor are 15 at 15 GHz and 1.8 nH at 1 GHz, respectively.
|Appears in Collections:||機械工程學系所|
Show full item record
Files in This Item:
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.