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|標題:||Influence of growth temperature on the optical and structural properties of ultrathin ZnO films||作者:||Chiang, Tun-Yuan
|關鍵字:||Ultrathin films;ZnO;Atomic layer deposition;Photoluminescence||出版社:||Elsevier B.V.||Project:||Journal of Alloys and Compounds, Volume 509, Issue 18, Page(s) 5623-5626.||摘要:||
This study investigates the effect of growth temperature on the optical and structural properties of ultrathin ZnO films on the polished Si substrate. Thickness of the ultrathin ZnO films deposited by atomic layer deposition (ALD) method was about 10 nm. Photoluminescence (PL), X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM) techniques were used to measure the properties of ultrathin ZnO films. Experimental results showed that the ultrathin ZnO film deposited at 200 C had excellent ultraviolet emission intensity, and the average roughness of the film surface was about 0.26 nm.
|Appears in Collections:||機械工程學系所|
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