Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44945
標題: A micromachined microwave switch fabricated by the complementary metal oxide semiconductor post-process of etching silicon dioxide
作者: Dai, C.L.
戴慶良
Peng, H.J.
Liu, M.C.
Wu, C.C.
Hsu, H.M.
Yang, L.J.
關鍵字: microwave switch;CMOS;post-process;rf mems switches
Project: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 44, Issue 9A, Page(s) 6804-6809.
摘要: 
In this study, we investigate the fabrication of a micromachined microwave switch using the commercial 0.35 mu m double polysilicon four metal (DPFM) complementary metal oxide semiconductor (CMOS) process and the post-process of only one maskless wet etching. The post-process has merits of easy execution and low cost. The post-process uses an etchant (silox vapox III) to etch the silicon dioxide layer to release the suspended structures of the microwave switch. The microwave switch is a capacitive type that is actuated by an electrostatic force. The components of the microwave switch are coplanar waveguide (CPW) transmission lines, a suspended membrane and supported springs. Experimental results show that the driving voltage of the switch is about 17 V. The switch has an insertion loss of -2.5 dB at 50 GHz and an isolation of -15 dB at 50 GHz.
URI: http://hdl.handle.net/11455/44945
ISSN: 0021-4922
DOI: 10.1143/jjap.44.6804
Appears in Collections:機械工程學系所

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