Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44957
標題: In situ electrostatic microactuators for measuring the Young's modulus of CMOS thin films
作者: Dai, C.L.
戴慶良
關鍵字: pressure sensor;technology;fabrication;switches
Project: Journal of Micromechanics and Microengineering
期刊/報告no:: Journal of Micromechanics and Microengineering, Volume 13, Issue 5, Page(s) 563-567.
摘要: 
This paper presents an electrostatic microactuator chip for measuring the Young's modulus of thin films. The major feature of this chip is that it contains two electrostatic microactuators which can measure the relationship between the force and the deformation of thin films and evaluate the Young's modulus of aluminum (Al) and silicon dioxide (SiO2) thin films. The chip was fabricated using the 0.6 mum single polysilicon three metal (SPTM) complementary metal-oxide semiconductor (CMOS) process and post-processing. The post-processing depends on only maskless dry etching. Experimental results indicate that the Young's modulus of Al films is 55 +/- 6 GPa and that of SiO2 films is 61 +/- 7 GPa in the 0.6 mum SPTM CMOS process.
URI: http://hdl.handle.net/11455/44957
ISSN: 0960-1317
DOI: 10.1088/0960-1317/13/5/306
Appears in Collections:機械工程學系所

Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.