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標題: | Thermal effects in PZT: diffusion of titanium and recrystallization of platinum | 作者: | Dai, C.L. 戴慶良 Xiao, F.Y. Lee, C.Y. Cheng, Y.C. Chang, P.Z. Chang, S.H. |
關鍵字: | PZT;MOD;thermal effects;hillocks;cracks;thin-films;actuators | Project: | Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing | 期刊/報告no:: | Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing, Volume 384, Issue 1-2, Page(s) 57-63. | 摘要: | This paper shows temperature dependent hillocks and cracks on the piezoelectric thin film lead-zirconate-titanate (PZT). The PZT thin film is deposited on Pt/Ti/SiO2/Si substrate by metal organic decomposition (MOD) where platinum is a bottom electrode and titanium is an adhesive layer. Experimental results demonstrate that if the annealing temperature exceeds 700degreesC, titanium diffuses into the platinum layer, and platinum recrystallizes. In addition, partially volatilizable solution in PZT evaporates and thus, causes volume change and residual stresses. Hillocks and cracks in PZT are primarily caused by the above-mentioned thermal effects and make the top electrode and the bottom electrode electrically short. Two methods are applied to improve the thermal effects of platinum and titanium. PZT thin film with perovskite structure is well characterized by X-ray diffractometer (XRD) and a hysteresis loop. The remnant polarization is 20.448 muC/cm(2), and the coercive field is 183.299 V/cm. The resonant and anti-resonant frequencies are 14.95 and 20.2 kHz, respectively. The piezoelectric constants, d(31) and d(33), and the electromechanical coupling coefficient are 159.57 pC/N, -72.86 pC/N, and 0.672, respectively. (C) 2004 Elsevier B.V. All rights reserved. |
URI: | http://hdl.handle.net/11455/44962 | ISSN: | 0921-5093 | DOI: | 10.1016/j.msea.2004.05.067 |
Appears in Collections: | 機械工程學系所 |
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