Please use this identifier to cite or link to this item:
|標題:||A maskless wet etching silicon dioxide post-CMOS process and its application||作者:||Dai, C.L.
|關鍵字:||CMOS;microstructures;post-process;standard cmos;fabrication;microstructures;accelerometer;microsystems;microsensors;technology;sensor;switch||Project:||Microelectronic Engineering||期刊/報告no：:||Microelectronic Engineering, Volume 83, Issue 11-12, Page(s) 2543-2550.||摘要:||
The complementary metal oxide semiconductor (CMOS) surface micromachining post-process for fabricating suspended microstructures has been investigated. The post-process requires only one wet etching to remove sacrificial layers, which uses a silox vapox III etchant to etch the silicon dioxide layers and to release the suspended structures. The advantages of the post-process are easy execution and low-cost maskless wet etching. Many microstructures, which contain cantilever beams, comb structures and microrotors, are fabricated using the CMOS surface micromachining post-process. Using the same process, two devices such as a radio frequency (RF) switch and a micro-xy stage are successfully developed. Experimental results reveal that the RF switch has an insertion loss of -1.7 dB at 40 GHz and an isolation of -11 dB at 40 GHz. The driving voltage of the RF switch is 19 V. (c) 2006 Elsevier B.V. All rights reserved.
|Appears in Collections:||機械工程學系所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.