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|標題:||Capacitive RF switches manufactured by the CMOS-MEMS technique||作者:||Yang, M.Z.
|關鍵字:||RF switches;Microactuators;CMOS-MEMS;voltage||Project:||Microelectronic Engineering||期刊/報告no：:||Microelectronic Engineering, Volume 88, Issue 8, Page(s) 2242-2246.||摘要:||
This work investigates the fabrication and characterization of a capacitive radio frequency (RF) switch using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique. The micromechanical RF switch had a high isolation and a low driving voltage. The structure of the micromechanical RF switch contains a coplanar waveguide (CPW), a suspended membrane, eight springs and four suspended inductors in series. The suspended inductors are used to enhance the characteristic of the RF switch. The finite element method software, CoventorWare, is employed to simulate the mechanical behaviors of the RF switch. After completion of the CMOS process, the RF switch requires a post-process to release the suspended structures. The post-process utilizes a dry etching and a wet etching to etch the sacrificial layer, and to obtain the suspended structures of the RF switch. Experimental results reveal that the RF switch has an insertion loss of 0.85 dB at 35 GHz and an isolation of 25 dB at 35 GHz. The driving voltage of the switch is about 11 V. (C) 2011 Elsevier B.V. All rights reserved.
|Appears in Collections:||機械工程學系所|
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