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|標題:||Fabrication and characterization of a microelectromechanical tunable capacitor||作者:||Dai, C.L.
|關鍵字:||micromechanical tunable capacitor;CMOS;microactuator;etching silicon dioxide;mems variable capacitor;post-cmos process;tuning range;design;micromirror;technology;inductor||Project:||Microelectronics Journal||期刊/報告no：:||Microelectronics Journal, Volume 38, Issue 12, Page(s) 1257-1262.||摘要:||
A micromechanical tunable capacitor fabricated using the commercial 0.35 mu m complementary metal oxide semiconductor (CMOS) process and the post-process has been investigated in this study. The structure of the tunable capacitor consists of a membrane, supported beams, driving and sensing electrodes. The membrane is sustained by the supported beams. The tunable capacitor requires only one wet etching post-process to release the suspended structures. The post-process has the advantages of easy execution and low cost. The tunable capacitor contains a driving part and a sensing part. The sensing part generates a change in capacitance when applying a driving voltage to the driving part. Experimental results show that the tunable capacitor has a capacitance of 1.38 pF, a tuning range of 85% and a Q-factor of 40 at 100 MHz. (C) 2007 Elsevier Ltd. All rights reserved.
|Appears in Collections:||機械工程學系所|
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