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標題: Fabrication and characterization of a microelectromechanical tunable capacitor
作者: Dai, C.L.
Lin, S.C.
Chang, M.W.
關鍵字: micromechanical tunable capacitor;CMOS;microactuator;etching silicon dioxide;mems variable capacitor;post-cmos process;tuning range;design;micromirror;technology;inductor
Project: Microelectronics Journal
期刊/報告no:: Microelectronics Journal, Volume 38, Issue 12, Page(s) 1257-1262.
A micromechanical tunable capacitor fabricated using the commercial 0.35 mu m complementary metal oxide semiconductor (CMOS) process and the post-process has been investigated in this study. The structure of the tunable capacitor consists of a membrane, supported beams, driving and sensing electrodes. The membrane is sustained by the supported beams. The tunable capacitor requires only one wet etching post-process to release the suspended structures. The post-process has the advantages of easy execution and low cost. The tunable capacitor contains a driving part and a sensing part. The sensing part generates a change in capacitance when applying a driving voltage to the driving part. Experimental results show that the tunable capacitor has a capacitance of 1.38 pF, a tuning range of 85% and a Q-factor of 40 at 100 MHz. (C) 2007 Elsevier Ltd. All rights reserved.
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2007.09.026
Appears in Collections:機械工程學系所

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