Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44971
標題: Micro FET pressure sensor manufactured using CMOS-MEMS technique
作者: Dai, C.L.
戴慶良
Kao, P.H.
Tai, Y.W.
Wu, C.C.
關鍵字: FET pressure sensor;CMOS;MEMS;high-temperature applications;micromachining technology;fabrication;silicon;surface;heater;switch;array
Project: Microelectronics Journal
期刊/報告no:: Microelectronics Journal, Volume 39, Issue 5, Page(s) 744-749.
摘要: 
The fabrication of a micro field effect transistor (FET) pressure sensor using the commercial 0.35 mu m complementary metal oxide semiconductor (CMOS) process and a post-process has been investigated. The pressure sensor is composed of 16 sensing cells in parallel, and each sensing cell includes a suspended membrane and an NMOS. The suspended membrane is the movable gate of the NMOS. The pressure sensor needs a post-process to obtain the suspended membrane after the CMOS process. The post-process employs etchants, to etch the sacrificial layers to release the suspended membrane, and then a low-pressure chemical vapor deposition (LPCVD) parylene is used to seal the etching holes in the pressure sensor. The pressure sensor produces a change in current when applying a pressure to the sensing cells. Experimental results show that the pressure sensor has a sensitivity of 0.022 mu A/kPa in the pressure range of 0-500 kPa. (C) 2007 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/44971
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2007.12.015
Appears in Collections:機械工程學系所

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