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|標題:||Modeling and fabrication of a microelectromechanical microwave switch||作者:||Dai, C.L.
|關鍵字:||microwave switch;CMOS;micro actuator;etching silicon dioxide;cmos post-process;rf mems;design||Project:||Microelectronics Journal||期刊/報告no：:||Microelectronics Journal, Volume 38, Issue 4-5, Page(s) 519-524.||摘要:||
A microelectromechanical microwave switch manufactured by using a complementary metal oxide semiconductor (CMOS) postprocess has been implemented. An equivalent circuit model is proposed to analyze the performance of the microwave switch. The components of the microwave switch consist of a coplanar waveguide (CPW), a suspended membrane and supported springs. The postprocess requires only one wet etching to etch the sacrificial layer, and to release the suspended structures. Experimental results show that the switch has an insertion loss of -2 dB at 50 GHz and an isolation of -15 dB at 50 GHz. The driving voltage of the switch approximates to 19V. (c) 2007 Elsevier Ltd. All rights reserved.
|Appears in Collections:||機械工程學系所|
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