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標題: Fabrication and Characterization of a Tunable In-plane Resonator with Low Driving Voltage
作者: Kao, P.H.
Dai, C.L.
Hsu, C.C.
Lee, C.Y.
關鍵字: Micromechanical tunable resonators;Low driving voltage;CMOS-MEMS;etching silicon dioxide;cmos-mems technique;post-process;inductors;sensor
Project: Sensors
期刊/報告no:: Sensors, Volume 9, Issue 3, Page(s) 2062-2075.
This study presents the fabrication and characterization of a micromechanical tunable in-plane resonator. The resonator is manufactured using the commercial 0.35 mu m complementary metal oxide semiconductor (CMOS) process. The resonator is made of aluminum, and the sacrificial layer is silicon dioxide. The post-process involves only one maskless etching step using an etchant to remove the sacrificial layer. The resonator includes three parts: a driving part to provide a driving force, a sensing part that is used to detect a change in capacitance when the resonator is vibrating, and a tuning part that changes the resonant frequency of the resonator. The main advantages of the tunable resonator are a low driving voltage and compatibility with the CMOS process. The resonant frequency of the resonator can be changed upon applying a dc voltage to the tuning part. To reduce the driving voltage, the driving part is designed as comb-finger rows. Experimental results show that the resonator has a resonant frequency of about 183 kHz and a driving voltage of 10 V; the resonant frequency increases 14 kHz when a tuning voltage of 30 V is applied. The resonator has a maximum frequency-tuning ratio of 7.6%.
ISSN: 1424-8220
DOI: 10.3390/s90302062
Appears in Collections:機械工程學系所

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