Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44998
標題: Modeling and fabrication of micro FET pressure sensor with circuits
作者: Dai, C.L.
戴慶良
Tai, Y.W.
Kao, P.H.
關鍵字: micro pressure sensor;CMOS-MEMS;readout circuit;high-temperature applications;cmos process;microsensor;inductors;array
Project: Sensors
期刊/報告no:: Sensors, Volume 7, Issue 12, Page(s) 3386-3398.
摘要: 
This paper presents the simulation, fabrication and characterization of a micro FET (field effect transistor) pressure sensor with readout circuits. The pressure sensor includes 16 sensing cells in parallel. Each sensing cell that is circular shape is composed of an MOS (metal oxide semiconductor) and a suspended membrane, which the suspended membrane is the movable gate of the MOS. The CoventorWare is used to simulate the behaviors of the pressure sensor, and the HSPICE is employed to evaluate the characteristics of the circuits. The pressure sensor integrated with circuits is manufactured using the commercial 0.35 mu m CMOS (complementary metal oxide semiconductor) process and a post-process. In order to obtain the suspended membranes, the pressure sensor requires a post-CMOS process. The post-process adopts etchants to etch the sacrificial layers in the pressure sensors to release the suspended membranes, and then the etch holes in the pressure sensor are sealed by LPCVD (low pressure chemical vapor deposition) parylene. The pressure sensor produces a change in current when applying a pressure to the sensing cells. The circuits are utilized to convert the current variation of the pressure sensor into the voltage output. Experimental results show that the pressure sensor has a sensitivity of 0.032 mV/kPa in the pressure range of 0-500 kPa.
URI: http://hdl.handle.net/11455/44998
ISSN: 1424-8220
DOI: 10.3390/s7123386
Appears in Collections:機械工程學系所

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