Please use this identifier to cite or link to this item:
標題: Novel method for in-situ monitoring of thickness of silicon wafer during wet etching
作者: Lee, C.Y.
Chang, P.Z.
Chen, Y.Y.
Dai, C.L.
Wang, X.Y.
Chen, P.H.
Lee, S.J.
關鍵字: in-situ monitoring;plate wave sensor;Li-doped ZnO;IDT;membrane
Project: Sensors and Materials
期刊/報告no:: Sensors and Materials, Volume 18, Issue 2, Page(s) 71-82.
In this investigation, we developed a plate wave sensor made on a Li-doped ZnO piezoelectric film for monitoring the thickness of a silicon membrane in real-time during wet etching. A novel method, which differs from any presented in previous work on etch-stop techniques, is developed to monitor in-situ the thickness of a silicon membrane during wet etching. In this work, in which the design wavelength of the interdigital transducers (IDT) is 40 mu m, the method presented for measuring the thickness of a silicon membrane from 20 pm to 40 pm in real-time is highly accurate and simple to implement. Base on the same methodology, the proposed plate wave sensor also allows the thickness of a silicon membrane to be monitored from a few pm to hundreds of mu m in-situ, depending on the periodicity of the IDT. The principles of the method, the detailed fabrication flow, the setup for monitoring the thickness and the simulation and experimental results are all addressed. The theoretical and measured values differ by an error of less than 1.50 mu m and are very close to each other.
ISSN: 0914-4935
Appears in Collections:機械工程學系所

Show full item record

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.