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|標題:||Nanocone SiGe antireflective thin films fabricated by ultrahigh-vacuum chemical vapor deposition with in situ annealing||作者:||Chang, Y.M.
|關鍵字:||SiGe;Thin films;Annealing;Nanostructures;Antireflective layer;Atomic force microscopy;silicon solar-cells;mobility enhancement;surface;morphology;substrate;mosfets;growth;layers||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 518, Issue 14, Page(s) 3782-3785.||摘要:||
In this study, we fabricated nanocone-presenting SiGe antireflection layers using only ultrahigh-vacuum chemical vapor deposition. In situ thermal annealing was adopted to cause SiGe clustering, yielding a characteristic nanocone array on the SiGe surface. Atomic force microscopy indicated that the SiGe nanocones had uniform height and distribution. Spectrophotometric measurements revealed that annealing at 900 degrees C yielded SiGe thin films possessing superior antireflective properties relative to those of the as-grown SiGe sample. We attribute this decrease in reflectance to the presence of the nanostructured cones. Prior to heat treatment, the mean reflectance of ultraviolet rays (wavelength <400 nm) of the SiGe thin film was ca. 61.7%; it reduced significantly to less than 28.5% when the SiGe thin film was annealed at 900 degrees C. Thus, the drop in reflectance of the SiGe thin film after thermal treatment exceeded 33%. (C) 2010 Elsevier B.V. All rights reserved.
|Appears in Collections:||機械工程學系所|
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