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|標題:||Anodic Aluminum Oxide Diodes||作者:||Chang, C.Y.
|關鍵字:||fabrication;template;arrays||Project:||Japanese Journal of Applied Physics||期刊/報告no：:||Japanese Journal of Applied Physics, Volume 50, Issue 7.||摘要:||
During anodic oxidation of aluminum, the incorporated anion species from the electrolyte are drawn into the growing barrier layer at the pore base by the high electric field and, afterward, migrate inward. The barrier layer consists of acid anion-contaminated regions adjacent to the oxide/electrolyte interface and relatively pure alumina further away from it. It can be presumed that there is a depletion layer region in between the acid anion-contaminated material and the pure alumina material. This study investigates the diode characteristics of the anodic aluminum oxide (AAO) film based on the depletion layer region presumption. Different electrolyte acids are employed to fabricate AAO diodes which possess different electrical properties. The current-voltage (I-V) characteristic curves indicate that the AAO devices possess the electrical property of a diode, especially the sulfuric acid processed AAO. It was observed that the threshold voltages for the sulfuric acid, oxalic acid, and phosphoric acid are 3.3, 8, and 16 V, respectively. This fits in with the sequential order presumption of the p, n depletion layer thicknesses for these three electrolyte acids. (C) 2011 The Japan Society of Applied Physics
|Appears in Collections:||生醫工程研究所|
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