Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46585
標題: Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates
作者: Chu, Mu-Tao
Liao, Wen-Yih
Horng, Ray-Hua
Tsai, Tsung-Yen
Wu, Tsai-Bau
Liu, Shu-Ping
Wu, Ming-Hsien
Lin, Ray-Ming
關鍵字: Edge-dislocation density;InGaN solar cell;light absorption;patterned sapphire
出版社: IEEE Electron Devices Society
Project: IEEE Electron Device Letters, Volume 32, Issue 7, Page(s) 922-924.
摘要: 
In this letter, InGaN-based solar cells with a p-InGaN/i-InGaN/n-GaN double-heterojunction structure were fabricated and characterized. Two kinds of sapphire substrates [i.e., a conventional sapphire substrate (CSS) and a patterned sapphire substrate (PSS)] were used for epitaxial growth. Both the solar cells grown on the CSS and the PSS demonstrated a high open-circuit voltage of 2.05 and 2.08 V, respectively. However, the short-circuit current of the solar cells grown on the PSS showed an improvement of 27.6% compared with that of the cells grown on the CSS. Such observation could be attributed to low edgedislocation density and the increase in the light-absorption path by the scattering of interface incident light between the substrate and the epitaxial layer for the solar cell grown on the PSS.
URI: http://hdl.handle.net/11455/46585
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2144954
Appears in Collections:精密工程研究所

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