Please use this identifier to cite or link to this item:
|標題:||Enhancing Light Output Power of InGaN-Based Light-Emitting Diodes with an Embedded Self-Textured Oxide Mask Structure||作者:||Lin, W.Y.
|關鍵字:||chemical-vapor-deposition;selective growth;phase epitaxy;gan;alxga1-xn||Project:||Journal of the Electrochemical Society||期刊/報告no：:||Journal of the Electrochemical Society, Volume 158, Issue 12, Page(s) H1242-H1246.||摘要:||
A 460 nm InGaN/GaN light-emitting diode (LED) with a self-textured oxide mask (STOM) structure was demonstrated using metal-organic chemical vapor deposition (MOCVD). The fabricating of STOM employed a low temperature (850 degrees C) GaN template to form a textured surface onto which the SiO(2) mask was fabricated. Measurements of optical and electrical properties of the LED showed that the corrugated STOM structure increases light scattering and reflection to enhance light output, and also reduces the dislocations to inhibit non-radiative recombination. Under an injection current of 20 mA, the forward voltages of the STOM-LED and conventional LED (C-LED) were nearly identical at 3.41 V. The leakage current of the STOM-LED was lower than that of C-LED, and the STOM-LED's light output power was approximately 47% higher (at 20 mA). This significant improvement was attributed to the enhanced light extraction via the STOM array. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.071112jes] All rights reserved.
|Appears in Collections:||精密工程研究所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.