Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46592
DC FieldValueLanguage
dc.contributor.authorLin, W.Y.en_US
dc.contributor.author洪瑞華zh_TW
dc.contributor.authorShen, K.C.en_US
dc.contributor.authorHorng, R.H.en_US
dc.contributor.authorWuu, D.S.en_US
dc.contributor.author武東星zh_TW
dc.date2011zh_TW
dc.date.accessioned2014-06-06T08:20:25Z-
dc.date.available2014-06-06T08:20:25Z-
dc.identifier.issn0013-4651zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/46592-
dc.description.abstractA 460 nm InGaN/GaN light-emitting diode (LED) with a self-textured oxide mask (STOM) structure was demonstrated using metal-organic chemical vapor deposition (MOCVD). The fabricating of STOM employed a low temperature (850 degrees C) GaN template to form a textured surface onto which the SiO(2) mask was fabricated. Measurements of optical and electrical properties of the LED showed that the corrugated STOM structure increases light scattering and reflection to enhance light output, and also reduces the dislocations to inhibit non-radiative recombination. Under an injection current of 20 mA, the forward voltages of the STOM-LED and conventional LED (C-LED) were nearly identical at 3.41 V. The leakage current of the STOM-LED was lower than that of C-LED, and the STOM-LED's light output power was approximately 47% higher (at 20 mA). This significant improvement was attributed to the enhanced light extraction via the STOM array. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.071112jes] All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of the Electrochemical Societyen_US
dc.relation.ispartofseriesJournal of the Electrochemical Society, Volume 158, Issue 12, Page(s) H1242-H1246.en_US
dc.relation.urihttp://dx.doi.org/10.1149/2.071112jesen_US
dc.subjectchemical-vapor-depositionen_US
dc.subjectselective growthen_US
dc.subjectphase epitaxyen_US
dc.subjectganen_US
dc.subjectalxga1-xnen_US
dc.titleEnhancing Light Output Power of InGaN-Based Light-Emitting Diodes with an Embedded Self-Textured Oxide Mask Structureen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1149/2.071112jeszh_TW
item.languageiso639-1en_US-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
Appears in Collections:精密工程研究所
Show simple item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.