Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46593
DC FieldValueLanguage
dc.contributor.authorLin, W.Y.en_US
dc.contributor.author洪瑞華zh_TW
dc.contributor.authorWuu, D.S.en_US
dc.contributor.authorHuang, S.C.en_US
dc.contributor.authorLo, S.Y.en_US
dc.contributor.authorLiu, C.M.en_US
dc.contributor.authorHorng, R.H.en_US
dc.contributor.author武東星zh_TW
dc.date2011zh_TW
dc.date.accessioned2014-06-06T08:20:25Z-
dc.date.available2014-06-06T08:20:25Z-
dc.identifier.issn1041-1135zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/46593-
dc.description.abstractA 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-Perot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 A because the STOM array can act as scattering centers to enhance the light extraction.en_US
dc.language.isoen_USzh_TW
dc.relationIeee Photonics Technology Lettersen_US
dc.relation.ispartofseriesIeee Photonics Technology Letters, Volume 23, Issue 17, Page(s) 1240-1242.en_US
dc.relation.urihttp://dx.doi.org/10.1109/lpt.2011.2158992en_US
dc.subjectFabry-Peroten_US
dc.subjectInGaNen_US
dc.subjectlight-emitting diode (LED)en_US
dc.subjectoxideen_US
dc.subjectwet etching processen_US
dc.subjectefficiencyen_US
dc.titleDemonstration of InGaN Light-Emitting Diodes by Incorporating a Self-Textured Oxide Mask Structureen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1109/lpt.2011.2158992zh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
Appears in Collections:精密工程研究所
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