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標題: Demonstration of InGaN Light-Emitting Diodes by Incorporating a Self-Textured Oxide Mask Structure
作者: Lin, W.Y.
Wuu, D.S.
Huang, S.C.
Lo, S.Y.
Liu, C.M.
Horng, R.H.
關鍵字: Fabry-Perot;InGaN;light-emitting diode (LED);oxide;wet etching process;efficiency
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 23, Issue 17, Page(s) 1240-1242.
A 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-Perot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 A because the STOM array can act as scattering centers to enhance the light extraction.
ISSN: 1041-1135
DOI: 10.1109/lpt.2011.2158992
Appears in Collections:精密工程研究所

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