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|標題:||Demonstration of InGaN Light-Emitting Diodes by Incorporating a Self-Textured Oxide Mask Structure||作者:||Lin, W.Y.
|關鍵字:||Fabry-Perot;InGaN;light-emitting diode (LED);oxide;wet etching process;efficiency||Project:||Ieee Photonics Technology Letters||期刊/報告no：:||Ieee Photonics Technology Letters, Volume 23, Issue 17, Page(s) 1240-1242.||摘要:||
A 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-Perot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 A because the STOM array can act as scattering centers to enhance the light extraction.
|Appears in Collections:||精密工程研究所|
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