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|標題:||Thermal Behavior of Sapphire-Based InGaN Light-Emitting Diodes with Cap-Shaped Copper-Diamond Substrates||作者:||Horng, R.H.
|Project:||Electrochemical and Solid State Letters||期刊/報告no：:||Electrochemical and Solid State Letters, Volume 14, Issue 5, Page(s) H215-H217.||摘要:||
Light-emitting diode (LED) packages with various heat spreaders were developed to examine the heat dissipation property of sapphire-based LEDs. A cap-shaped copper-diamond sheet was fabricated by composite electroplating and directly contacted to the sapphire surface to enhance heat dissipation from the chip. The thermal diffusivity of the copper-diamond sheet was 0.7179 cm(2)/s, as measured using the laser-flash method. LEDs with the copper-diamond sheet presents low surface temperature (49 degrees C at 700 mA injecting current) and low thermal resistance (5.8 K/W). These findings suggest that the copper-diamond sheet helped reduce LED thermal resistance, and thereby prevented heat accumulation. The LED package also exhibited high light output power. (C )2011 The Electrochemical Society. [DOI: 10.1149/1.3559794] All rights reserved.
|Appears in Collections:||精密工程研究所|
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