Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46622
標題: Thermal Behavior of Sapphire-Based InGaN Light-Emitting Diodes with Cap-Shaped Copper-Diamond Substrates
作者: Horng, R.H.
洪瑞華
Hu, A.L.
Lin, R.C.
Peng, K.C.
Chiang, Y.C.
Project: Electrochemical and Solid State Letters
期刊/報告no:: Electrochemical and Solid State Letters, Volume 14, Issue 5, Page(s) H215-H217.
摘要: 
Light-emitting diode (LED) packages with various heat spreaders were developed to examine the heat dissipation property of sapphire-based LEDs. A cap-shaped copper-diamond sheet was fabricated by composite electroplating and directly contacted to the sapphire surface to enhance heat dissipation from the chip. The thermal diffusivity of the copper-diamond sheet was 0.7179 cm(2)/s, as measured using the laser-flash method. LEDs with the copper-diamond sheet presents low surface temperature (49 degrees C at 700 mA injecting current) and low thermal resistance (5.8 K/W). These findings suggest that the copper-diamond sheet helped reduce LED thermal resistance, and thereby prevented heat accumulation. The LED package also exhibited high light output power. (C )2011 The Electrochemical Society. [DOI: 10.1149/1.3559794] All rights reserved.
URI: http://hdl.handle.net/11455/46622
ISSN: 1099-0062
DOI: 10.1149/1.3559794
Appears in Collections:精密工程研究所

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