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標題: | Thermal Behavior of Sapphire-Based InGaN Light-Emitting Diodes with Cap-Shaped Copper-Diamond Substrates | 作者: | Horng, R.H. 洪瑞華 Hu, A.L. Lin, R.C. Peng, K.C. Chiang, Y.C. |
Project: | Electrochemical and Solid State Letters | 期刊/報告no:: | Electrochemical and Solid State Letters, Volume 14, Issue 5, Page(s) H215-H217. | 摘要: | Light-emitting diode (LED) packages with various heat spreaders were developed to examine the heat dissipation property of sapphire-based LEDs. A cap-shaped copper-diamond sheet was fabricated by composite electroplating and directly contacted to the sapphire surface to enhance heat dissipation from the chip. The thermal diffusivity of the copper-diamond sheet was 0.7179 cm(2)/s, as measured using the laser-flash method. LEDs with the copper-diamond sheet presents low surface temperature (49 degrees C at 700 mA injecting current) and low thermal resistance (5.8 K/W). These findings suggest that the copper-diamond sheet helped reduce LED thermal resistance, and thereby prevented heat accumulation. The LED package also exhibited high light output power. (C )2011 The Electrochemical Society. [DOI: 10.1149/1.3559794] All rights reserved. |
URI: | http://hdl.handle.net/11455/46622 | ISSN: | 1099-0062 | DOI: | 10.1149/1.3559794 |
Appears in Collections: | 精密工程研究所 |
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