Please use this identifier to cite or link to this item:
標題: Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells
作者: 洪瑞華
Horng, R.H.
Lin, S.T.
Tsai, Y.L.
Chu, M.T.
Liao, W.Y.
Wu, M.H.
Lin, R.M.
Lu, Y.C.
關鍵字: Laser lift-off;thin-film solar cell;wafer bonding;light-emitting-diodes
Project: Ieee Electron Device Letters
期刊/報告no:: Ieee Electron Device Letters, Volume 30, Issue 7, Page(s) 724-726.
In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.
ISSN: 0741-3106
DOI: 10.1109/led.2009.2021414
Appears in Collections:精密工程研究所

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.