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|標題:||Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells||作者:||洪瑞華
|關鍵字:||Laser lift-off;thin-film solar cell;wafer bonding;light-emitting-diodes||Project:||Ieee Electron Device Letters||期刊/報告no：:||Ieee Electron Device Letters, Volume 30, Issue 7, Page(s) 724-726.||摘要:||
In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.
|Appears in Collections:||精密工程研究所|
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