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標題: | Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells | 作者: | 洪瑞華 Horng, R.H. Lin, S.T. Tsai, Y.L. Chu, M.T. Liao, W.Y. Wu, M.H. Lin, R.M. Lu, Y.C. |
關鍵字: | Laser lift-off;thin-film solar cell;wafer bonding;light-emitting-diodes | Project: | Ieee Electron Device Letters | 期刊/報告no:: | Ieee Electron Device Letters, Volume 30, Issue 7, Page(s) 724-726. | 摘要: | In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure. |
URI: | http://hdl.handle.net/11455/46623 | ISSN: | 0741-3106 | DOI: | 10.1109/led.2009.2021414 |
Appears in Collections: | 精密工程研究所 |
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