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|標題:||Nitride-based high power flip-chip near-UV LEDs with reflective submount||作者:||Shen, C.F.
|關鍵字:||light-emitting-diodes;room-temperature;ingan;gan;nm;emission;contacts||Project:||Iet Optoelectronics||期刊/報告no：:||Iet Optoelectronics, Volume 1, Issue 1, Page(s) 27-30.||摘要:||
Nitride-based high power flip-chip near-ultraviolet (UV) light emitting diodes (LEDs) with a reflective mirror are fabricated by depositing Al onto a Si submount. It is demonstrated that the Al layer coated onto a Si submount can effectively reflect downward emitting photons for flip-chip LEDs. Although the operation voltage of the proposed LEDs is slightly increased, it is found that the output power is at least 30% higher than that of conventional LEDs. It is also found that flip-chip near-UV LEDs are more reliable than conventional non-flip-chip LEDs.
|Appears in Collections:||精密工程研究所|
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