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http://hdl.handle.net/11455/46624
標題: | Nitride-based high power flip-chip near-UV LEDs with reflective submount | 作者: | Shen, C.F. 洪瑞華 Chang, S.J. Ko, T.K. Shei, S.C. Lai, W.C. Chang, C.S. Chen, W.S. Huang, S.P. Ku, Y.W. Horng, R.H. |
關鍵字: | light-emitting-diodes;room-temperature;ingan;gan;nm;emission;contacts | Project: | Iet Optoelectronics | 期刊/報告no:: | Iet Optoelectronics, Volume 1, Issue 1, Page(s) 27-30. | 摘要: | Nitride-based high power flip-chip near-ultraviolet (UV) light emitting diodes (LEDs) with a reflective mirror are fabricated by depositing Al onto a Si submount. It is demonstrated that the Al layer coated onto a Si submount can effectively reflect downward emitting photons for flip-chip LEDs. Although the operation voltage of the proposed LEDs is slightly increased, it is found that the output power is at least 30% higher than that of conventional LEDs. It is also found that flip-chip near-UV LEDs are more reliable than conventional non-flip-chip LEDs. |
URI: | http://hdl.handle.net/11455/46624 | ISSN: | 1751-8768 | DOI: | 10.1049/iet-opt:20060003 |
Appears in Collections: | 精密工程研究所 |
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