Please use this identifier to cite or link to this item:
|標題:||The variation of microstructure in Czochralski silicon induced by low-high two step anneal||作者:||洪瑞華
|關鍵字:||oxygen precipitation retardation;defects;dislocations;model||Project:||Journal of Applied Physics||期刊/報告no：:||Journal of Applied Physics, Volume 83, Issue 1, Page(s) 56-59.||摘要:||
Systematic low-high two-step and high-low-high three-step annealing studies were conducted to investigate the microdefects generated in Czochralski silicon wafers. It was found that cluster precipitates entangled with dislocations are annihilated during extended low temperature anneal. A model involving the recombination of vacancies with interstitials is proposed to explain this phenomenon. (C) 1998 American Institute of Physics.
|Appears in Collections:||精密工程研究所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.