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http://hdl.handle.net/11455/46625| 標題: | The variation of microstructure in Czochralski silicon induced by low-high two step anneal | 作者: | 洪瑞華 Kung, C.Y. Liu, C.M. Hsu, W. Horng, R.H. |
關鍵字: | oxygen precipitation retardation;defects;dislocations;model | Project: | Journal of Applied Physics | 期刊/報告no：: | Journal of Applied Physics, Volume 83, Issue 1, Page(s) 56-59. | 摘要: | Systematic low-high two-step and high-low-high three-step annealing studies were conducted to investigate the microdefects generated in Czochralski silicon wafers. It was found that cluster precipitates entangled with dislocations are annihilated during extended low temperature anneal. A model involving the recombination of vacancies with interstitials is proposed to explain this phenomenon. (C) 1998 American Institute of Physics. |
URI: | http://hdl.handle.net/11455/46625 | ISSN: | 0021-8979 | DOI: | 10.1063/1.366701 |
| Appears in Collections: | 精密工程研究所 |
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