Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/46768
標題: (1st Asia-Pacific International Symposium on the Basic and Application of Plasma Technology,p195-p198)Characterization of a-SiGe:H Films Deposited by Pulse RF Power
作者: Y. L. Jiang
T. Y. Yew
關鍵字: a-SiGe:H Films;Pulse RF Power
出版社: Yeulin:Lunghwa University of Science and Technology
Project: 1st Asia-Pacific International Symposium on the Basic and Application of Plasma Technology, Page(s) 195-198.
URI: http://hdl.handle.net/11455/46768
Appears in Collections:光電工程研究所

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