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標題: 以射頻磁控濺鍍法製備矽鍺熱電薄膜-製程研發與特性分析
Developement and Characterization of SiGe Thermoelectric Thin Films Prepared by RF Magnetron Sputtering
作者: 張立信
關鍵字: 薄膜;thin film;材料科技;矽鍺;熱電;濺鍍;靶材;基礎研究;silicon germanium;thermoelectric;sputtering;target
Silicon germanium polycrystalline thin films are applied as raw materials for transistor, solarcell and thermoelectric devices in which micro-generator, micro-cooler and hydrogen gassensor are included. Since the development of these devices heavily influences energydevelopments and applications, the study on the processes and properties of silicongermanium thin films is very important. Among all processes producing silicon germaniumthin films, the radio frequency magnetron sputtering is superior due to its well depositionrate, good process control and low environmental cost. In this project, the process parametercontrol and property analysis of silicon germanium thin films prepared by radio frequencymagnetron sputtering are to be studied. This project will proceed for three years. Theinfluence of targets made by two most commonly used methods on the composition of thinfilms will be investigated at the first year of the project. Stuck and hot-pressed silicongermanium targets are chosen. The silicon and germanium percentages and dopantconcentrations of boron and phosphorous will be varied. The result from the first year studyis an important basis for the studies at the oncoming years. After determining the target,three parameters including dopant concentration, substrate temperature and hydrogencontent of the atmosphere in the sputtering chamber, are selected for the Taguchi's analysisat the second year of the project. The-Larger-the-Better property is the thermoelectricfigure-of-merit. The two parameters having the first two largest influencing factors will bechosen and further investigation on the influence of both parameters on the thin filmproperties including composition, grain size and thermoelectric properties will be carried outat the same year. At the third year of the project, the plasma density in the sputteringchamber and deposition time will be varied. Similarly, the thin film properties will bemeasured in order to find possible property variations accompanying the changes of thesetwo parameters. Mechanisms will be proposed to explain correlations.

其他識別: NSC97-2221-E005-015
Appears in Collections:材料科學與工程學系

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