Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/56261
DC FieldValueLanguage
dc.contributor高玉駿zh_TW
dc.contributor楊祺雄zh_TW
dc.contributor.author武東星zh_TW
dc.contributor.author洪瑞華zh_TW
dc.date2012-04zh_TW
dc.date.accessioned2014-06-06T09:05:35Z-
dc.date.available2014-06-06T09:05:35Z-
dc.identifier.urihttp://hdl.handle.net/11455/56261-
dc.description.abstract一種磊晶元件的製作方法,包含:(a)於磊晶用基板上形成犧牲膜;(b)將犧牲膜定義出犧牲結構,並在移除犧牲膜的部分結構時使基板裸露出的區域具有多數彼此相連結的凸部與凹部;(c)於犧牲結構與凸部向上磊晶形成底面與該些凹部形成間隙的磊晶層體;(d)自磊晶層體上形成導電基材,及將導電基材、磊晶層體定義出多數磊晶元件的圖樣流道;及(e)經圖樣流道與間隙蝕刻移除犧牲結構並讓磊晶元件與基板分離,得到多數磊晶元件。zh_TW
dc.language.isozh_TWzh_TW
dc.publisher材料科學與工程學系zh_TW
dc.relation.urihttp://twpat.tipo.gov.tw/tipotwoc/tipotwkmen_US
dc.title磊晶元件的製作方法zh_TW
dc.typePatentzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypePatent-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1zh_TW-
item.grantfulltextnone-
Appears in Collections:材料科學與工程學系
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