Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/56931
標題: Fabrication of amorphous silicon/amorphous silicon germanium NI1PI2N infared position detectors
作者: 江雨龍等
關鍵字: amorphous silicon/amorphous silicon germanium;NI1PI2N;position detectors
Project: 美國發明專利證號: US 6,680,478
URI: http://hdl.handle.net/11455/56931
Appears in Collections:光電工程研究所

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