Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/56931
DC FieldValueLanguage
dc.contributor.advisor江雨龍zh_TW
dc.contributor.advisorYeu-Long Jiangen_US
dc.contributor.author江雨龍等zh_TW
dc.contributor.other國立中興大學光電工程研究所zh_TW
dc.date2004-01zh_TW
dc.date.accessioned2014-06-06T09:07:14Z-
dc.date.available2014-06-06T09:07:14Z-
dc.identifier.urihttp://hdl.handle.net/11455/56931-
dc.language.isoen_USzh_TW
dc.relation美國發明專利證號: US 6,680,478zh_TW
dc.subjectamorphous silicon/amorphous silicon germaniumen_US
dc.subjectNI1PI2Nen_US
dc.subjectposition detectorsen_US
dc.titleFabrication of amorphous silicon/amorphous silicon germanium NI1PI2N infared position detectorsen_US
item.fulltextwith fulltext-
item.languageiso639-1en_US-
item.grantfulltextrestricted-
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