Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/60034
標題: Temperature Dependence of the Excess Noise of a GaN Nanowire Device
作者: L. C. Li
S. Y. Huang
J. A. Wei
Y. W. Suen
M. W. Lee
W. H. Hsieh
T. W. Liu
C. C. Chen
關鍵字: noise;low-frequency excess noise;GaN nanowire;electric fluctuatio;nsemiconductor
出版社: Japan:ICNF Committees
Project: 19th International Conference on Noise and Fluctuations
URI: http://hdl.handle.net/11455/60034
Appears in Collections:奈米科學研究所

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