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http://hdl.handle.net/11455/60071| 標題: | (IEDMS 1996,p087-p090)Hole Effective Masses in Relaxed SiC and SiGe Alloys | 作者: | C. Y. Lin C. W. Liu |
關鍵字: | effective mass;LCAO calculations;spin-orbit interactions;Ge-Si alloys;semiconductor materials;silicon compounds;wide band gap semiconductors | 出版社: | New York,USA:American Institute of Physics | Project: | IEDMS 1996:087-090 | URI: | http://hdl.handle.net/11455/60071 |
| Appears in Collections: | 物理學系所 |
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