Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/6031
標題: 用負載拉移的方法分析雙載子和異質接面雙載子電晶體的功率特性
Analysis of BJT and HBT power performance by Load-Pull method
作者: 吳家進
Wu, Chia Chin
關鍵字: HBT;元件結構;device layer structure;load pull;gain compression mechanism;功率特性;負載阻抗;增益壓縮機制
出版社: 電機工程學系
摘要: 
本論文主要分為四個部分,第一部份是介紹BJT和HBT的基本原理;第二部分是HBT元件結構的量測和分析;第三部分是分析BJT在基極定電流以及基極定電壓,這兩種不同偏壓方式之下的功率特性和增益壓縮機制;第四個部分則是分析HBT在基極定電流以及基極定電壓,這兩種不同偏壓方式之下的功率特性。
在HBT的元件結構分析方面,我們有特別的方法可以求出元件的摻雜和厚度;在基極定電流的偏壓方面,我們觀察其基極電壓、集極電流和電流增益,來判斷BJT不同的增益壓縮機制;在基極定電壓的偏壓方面,我們可以利用平均電流增益的下降,來判斷BJT大信號增益的壓縮;此外,我們也比較了HBT在基極定電流和基極定電壓,這兩種偏壓方式之下不同的功率特性;另外,對於偏壓在相同的偏壓點,但是負載阻抗卻不同的情形也作了分析,我們發現高的負載阻抗和低的負載阻抗,會有不同的功率特性。

This thesis is divided into four subjects. The first subject is the basic theory of BJT and HBT. In the second subject we analyze layer structure of HBT device. In the third subject we analyze the power performance and gain compression mechanism of BJT when it bias at constant base current and constant base voltage. In the fourth subject we analyze the power performance of HBT when it bias at constant base current and constant base voltage.
For the analysis of HBT device structure, we have developed a special method to find out device doping and thickness. For constant base current, we determine the gain compression mechanism of BJT by observing base voltage, collector current and average beta. For constant base voltage, we determine the gain compression mechanism of BJT by the decreasing of average beta. Moreover, we compare the power characteristics of HBT when it bias at constant base current and constant base voltage. Furthermore, we also analyze the power performance when it bias at the same point with different load impedance. Finally, we found that different load impedance get different results.
URI: http://hdl.handle.net/11455/6031
Appears in Collections:電機工程學系所

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