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標題: 用於AMOLED面板技術之關鍵元件模擬研究:OLED元件與IGZO TFT 元件
Simulation Study for key devices used in AMOLED Technology: OLED and IGZO TFT Devices
作者: 尤惠瑩
Yu, Hui-Ying
關鍵字: TCAD;模擬;AMOLED;OLED;a-IGZO TFTs;主動式矩陣;有機發光二極體;氧化物半導體
出版社: 電機工程學系所
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在a-IGZO 薄膜電晶體(TFTs)方面,以台大發表在APPLIED PHYSICS LETTERS( vol. 92,2008)上之研究為藍本,聚焦在探討兩種型式的a-IGZO薄膜電晶體(TFTs):空乏型(Depletion model)與增強型(Enhance model)模組,且研究這兩種模組之能態缺陷密度在band-tail states 與 deep-gap states對電流特性的影響,再與一般傳統a-Si:H材料做比較。此外,將a-IGZO 薄膜電晶體(TFTs)的閘極介電層改為有機材料Poly(4-Vinylphenol)PVP,並研究其電流特性。

In this thesis, we use TCAD tool to investigate the two key devices used in AMOLED technology: Organic Light Emitting Diode (OLED) and a-IGZO Thin-Film-Transistor. On the side of OLED, we simulate single layer OLED and double layer OLED as well as triple layer OLED, then study in detail how the characteristics of OLED would be affected by HTL(NPB), cathode, anode and the trap state parameters of organic material.
For a-IGZO TFTs, taking the National Taiwan University research work published in APPLIED PHYSICS LETTERS (vol. 92, 2008) as reference, we study two models of Depletion model and Enhance model for the a-IGZO TFTs. The aim is to compare the differences between conventional material a-Si:H and a-IGZO by means of using TCAD tool to adjust optimized fitting parameters with experiment data, and to discuss the effect of subgap DOSs including band-tail states and deep-gap states on current-voltage characteristics in detail. In addition, the other main topic for a-IGZO TFTs is to analyze current characteristic after the substitution of PVP for SiO2 in gate dielectric layer.
其他識別: U0005-0407201213295300
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