Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/6244
標題: 非晶矽薄膜電晶體液晶顯示器閘極驅動電路之研究
Study on a-Si TFT-LCD Gate Driver Circuit
作者: 韓西容
Han, Hsi-Rong
關鍵字: a-Si TFT-LCD;非晶矽薄膜電晶體液晶顯示器;Gate Driver Circuit;閘極驅動電路
出版社: 電機工程學系所
引用: [1] 顧鴻壽“光電液晶平面顯示器技術基礎及應用”, 中華民國九十年九月出版 [2] 戴亞翔“TFT-LCD面板的驅動與設計”, 中華民國九十五年四月出版 [3] Chih-Wen Lu and Chung Len Lee, “A Low Power High Speed Rail to Rail Class-AB Buffer Amplifier for Flat Panel Display Application”, 7th Asian Symposium on Information Display, Singapore ,pp. 221-224, September,2002. [4] R. G. Stewart, J. Dresner, S. Weisbrod, R. L Huq, D. Plus, David Sarnoff Research Center, Princeton, NJ, “Circuit Design for a-Si AMLCDS with Integrated Drivers”, 90 SID 95 DIGEST [5] E P Cuomo, R. G. Stewart, R. Huq, B. Greening, M. G. Kane, D. Jose, T Meyer, A. C. Ipri, “Sub-Notebook a-Si Color SVGA Display with integrated Drivers”, 1998 SID [6] Jin Jeon, Kyo-seop Choo, Won-Kyu Lee, Jun-ho Song, Hyung-guel Kim, “Integrated a-Si Gate Driver Circuit for TFT-LCD Panel”, 10 SID 04 DIGEST [7] Yong Ho Jang, Soo Young Yoon, Binn Kim, Min Doo Chun, Hyung Nyuck Cho, Nam Wook Cho, Chung-Dong Kim, and In-Jae Chung, “Integrated Gate Circuit Using a-Si TFT with Dual Pull-down Structure”, 2004 IDW. [8] Binn Kim , Yong Ho Jang, Soo Young Yoon, Min Doo Chun, Hyung Nyuck Cho, Nam Wook Cho, Choong Yong Sohn, Sung Hak Jo, Seung Chan Choi, Chang-Dong Kim, and In-Jae Chung, “a-Si Gate Driver Integration with Time Shared Data Driving”, IDW/AD ’05 1073 [9] Chun-Ching Wei, Wei-Chung Lin, Shih-Hsun Lo, Chun-Jong Chang, Yang-En Wu, “Integrated Gate Driver Circuit Using a-Si TFT”, IDW/AD ’05 1023 [10] US Patent, Patent number 3,937,984,Date of patent Feb.10,1976 [11] US Patent, Patent number 5,222,082,Date of patent Jun.22,1993 [12] US Patent, Patent number 5,410,583,Date of patent Apr.25,1995 [13] Soo Young Yoon, Yong Ho Jang, Binn Kim, Min Doo Chun, Hyung Nyuck Cho, Nam Wook Cho, Choong Yong Sohn, Sung Hak Jo, Chang-Dong Kim and In-Jae Chung , “Highly Stable Integrated Gate Driver Circuit using a-Si TFT with Dual Pull-down Structure ”, 348 SID 05 DIGEST [14] Hugues Lebrun, Nicolas Szydlo, Eric Bidal, “Threshold Voltage Drift of Amorphous Silicon TFT in Integrated Drivers for Active Matrix LCDs” , EURODISPLAY 2002 [15] H. Miyashita, Y. Watabe, “Dependence of Thin Film Transistor Characteristic on the Deposition Condition of Silicon Nitride and Amorphous Silicon” , IEEE, Trans. Electron Device, vol.41,No.4,APRIL 1994. [16] D. B. Thomasson, and T. N. Jackson, “High Mobility Tri-Layer a-Si:H Thin-Film Transistor with Ultrathin Active Layer” , IEEE Electron Device Lett., vol.18,No.8,AUGUST 1997. [17] “液晶顯示器技術手冊”, 台灣電子材料與元件協會出版 [18] Manabu Kodate* and Eisuke Kanzaki, “Pixel Level Data-Line Multiplexing for Low Cost / High Resolution AMLCDs” , 2002 SIDSID 02 DIGEST 1009
摘要: 
本論文提出一個利用非晶矽元件設計出閘極驅動電路,降低因浮接而受雜訊干擾與控制驅動時間,設計出可忽略長時間驅動所造成臨界電壓偏移之閘極驅動電路。
非晶矽與多晶矽薄膜電晶體被廣泛使用在主動式液晶顯示器,內建驅動電路在玻璃基板上是非常重要,可以減少驅動 IC 成本。相較於非晶矽薄膜電晶體元件,低溫多晶矽薄膜電晶體具有較佳元件特性,如電子遷移率較快、元件穩定度高等特性,所以目前研發主要集中在低溫多晶矽薄膜電晶體技術上,然而,低溫多晶矽薄膜電晶矽也有其缺點,就是需要額外製程如非晶矽轉多晶矽的結晶製程,最近,閘極驅動電路使用非晶矽薄膜電晶體元件內建在玻璃基板上,因為非晶矽薄膜電晶體不需額外結晶製程,更符合大量生產效益。
透過薄膜電晶體元件量測與電路模擬,能預測當臨界電壓因驅動而逐漸升高至15V時,閘極驅動依然電路能夠正常動作,預測其可靠度超過20,000小時。本論文製作2.2”a-Si TFT-LCD QVGA面板,閘極驅動電路製作於玻璃基板上,在80℃工作2500小時長時間驅動下,面板可正常動作。

In this thesis, Propose a novel design of a-Si gate driver circuit to reduce the noise from floating and controlling bias stress, Integrate driver can make it possible to perform operation regardless of the boost in the threshold voltage after a long-term use.
Amorphous silicon (a-Si) and LTPS (Low Temperature Polycrystalline Silicon) TFT (Thin Film Transistor) are beings used for manufacturing of AMLCD (Active Matrix Liquid Crystal Display).Integrating driver circuit on the panel is important in LCD technology because it can reduce the cost of driver ICs. Many researchers focus their attention on poly-Si TFT technology for this purpose, Since it provides superior device performance such as high mobility and more stable device characteristics, relative to a-Si TFT. However, an additional crystallization process of a-Si is needed for poly-Si. Recently, a-Si TFT technology has been studied as a key solution for integration of gate drivers on glass substrates, Because it requires no additional process and is also a technology well adapted for mass production.
By device measurement and simulation of the propose circuit. It could be predicted that the Vth of a-Si TFT would increase to 15V after at least 20,000hrs.This thesis made a 2.2” QVGA a-Si TFT-LCD panel with gate driver on glass technology, The long-term stress for our 2.2” QVGA a-Si TFT-LCD panel with gate driver has been measure over 2500 hrs at 80℃ and the function works well.
URI: http://hdl.handle.net/11455/6244
其他識別: U0005-1008200614503000
Appears in Collections:電機工程學系所

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