Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/6428
標題: 深次微米Bulk及SOI N-通道金氧半場效電晶體之有效率閘極電流模擬
Efficient Simulation of Gate Current in Deep Submicron Bulk and SOI N-MOSFET's
作者: 許源卿
Sheu, Yuan-Ching
關鍵字: Gate current;閘極電流;Boltzmann transport equation;Deep submicron devices;波茲曼傳輸方程式;深次微米元件
出版社: 電機工程學系
URI: http://hdl.handle.net/11455/6428
Appears in Collections:電機工程學系所

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