Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/6651
標題: 壓控振盪器調諧範圍與除頻器除頻範圍之研製
Investigation of Oscillator Tuning and Divider Locking Range
作者: 徐鈺翔
Xu, Yu-Xiang
關鍵字: 壓控振盪器;VCO
出版社: 電機工程學系所
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[23] Sheng-Lyang Jang, Jhong-Chen Luo,Chia-Wei Chang, Chien-Feng Lee,a- nd Jhin-Fang Huang”LC-Tank Colpitts Injection-Locked Frequency Divider Wi- th Even and Odd Modulo,” IEEE MICROWAVE AND WIRELESS COMPONEN- TS LETTERS, VOL. 19, NO. 2, FEBRUARY.2009. [24] U. Singh and M. Green, “High-frequency CML clock dividers in 0.13-um CMO- S operating up to 38 GHz,” IEEE J. Solid-State Circuits,vol. 40, no. 8, pp.1658- 1661, Aug. 2005. [25] S.-L. Jang , “LC-Tank Colpitts Injection-Locked Frequency Divider With Recor- d Locking Range, ” IEEE MICROWAVE AND WIRELESS COMPONENTS LET- TERS, VOL. 18, NO. 8, AUGUST 2008. [26] Q. Gu, Z. Xu, D. Huang, T. La Rocca, N. Y. Wang, W. Hant, and M. C. F. Cha- ng, “A low power V-band frequency divider with wide locking range and accur- ate quadrature output phases,” IEEE J. Solid-State Circuits, vol. 43, no. 4, pp. 9- 91-998, Apr. 2008 [27] J.X.Liu,C.Y.Hsu,H.R.Chuang,C.Y.Chen,”A 60GHz millimeter-wave CMOS Ma- chand balun,”IEEE RFIC Symposium pp.445-448,june 2007. [28] Jri Lee,Behzad Razavi,"A 40-GHz Frequency Divider in 0.18-um CMOS Techn- ology", IEEE J. Solid-State Circuits,Vol.39,NO.4,April.2004. [29] S.-G. Lee,J.-K.CHoi,"Current-reuse bleeding mixer",IEEE Electronics Letters,V- ol 36 No.8 13th April 2000. [30] MacEach ERN,L.A.,MANKU,T.,"A charge-injection method for Gilbert cell bia- sing,"IEEE Canadian Conf, Electrical and Computer Engineering, 1998, [31] Behzad Razavi, “A study of injection locking and pulling in oscillators,” I- EEE Journal of Solid-State Circuits, Vol.39, pp.1415-1424, September 2004. [32] Liang-Hung Lu, Jun-Chau Chien , “A Wide-Band CMOS Injection-Locked Ring Ocillator,” IEEE- MICROWAVE AND WIRELESS COMPONENTS LETTERS, V- OL. 15, NO. 10, OCTOBER 2005 [33]Behzad Razavi,“Design of analog CMOS integrated circuits,”McGraw Hill, 2001. [34]Behzad Razavi, “A study of injection locking and pulling in oscillators,” IEEE Journal of Solid-State Circuits, Vol.39, pp.1415-1424, September 2004. [35]陳思源, “CMOS 高耦合分波器之設計” 國立中興大學電機工程學系碩士學 位論文,2009. [36]Sheng-Lyang Jang,Chien-Feng Lee, and Wei-Hsung Yeh A Divide-by-3 Injection Locked Frequency Divider With Single-Ended Input,” IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 18, NO. 2, FEBRUARY 2008 [37]Tang-Nian Luo , Shuen-Yin Bai, and Yi-Jan Emery Chen,” A 60-GHz 0.13um C- MOS Divide-by-Three Frequency Divider,” IEEE TRANSACTIONS ON MICR- OWAVE THEORY AND TECHNIQUES, VOL. 56, NO. 11,NOVEMBER 2008. [38]傅冠霖, “LC-Tank振盪器相位雜訊與消耗功率設計之權衡與寬頻注入鎖定除 頻器” 國立中興大學電機工程學系碩士學位論文, Jan 2011
摘要: 
本論文有三個主題,第一個主題為寬調諧範圍之壓控振盪器設計,利用可變電容兩端偏壓控制通道電容大小,可發現可變電容分別工作在截止區、非線性區、累積區時電容值都不同,因此可畫出可變電容兩端偏壓對電容值之作圖,再利用電容值與振盪頻率成反比的關係,畫出可變電容兩端偏壓對頻率之作圖。有了可變電容兩端偏壓對頻率之作圖就可以求得 ,求得 之後可發現壓控振盪器之調諧範圍與可變電容上之振幅以及寄生電容值成反比,因此可利用此關係來設計寬調諧範圍之壓控振盪器。模擬中心頻率為13.5GHz,頻率可調範圍為12.93~14.96GHz,相位雜訊為-107.42dBc/Hz,消耗功率為2.86mW。
第二個主題為環型除頻器之設計,由巴克毫森條件可知迴路之相位偏移必須達到 電路才會產生振盪,由此推得環型振盪器至少要三級才滿足巴克豪森條件產生振盪,再由電流式單注入模式可推算出環型除頻器除頻範圍與環型除頻器級數成反比,與注入訊號振幅成正比,由此可知要設計寬除頻範圍之環型除頻器必須增加注入訊號之振幅。在電路設計上一、二級注入端採用gm-boosted共閘極將注入訊號放大達到較大之除頻範圍,第三級採用並聯MOS差動放大器來增加Gm值降低電路整體之功率消耗。電路以TSMC 0.18 um製程完成晶片製作,量測輸入頻率為5.9GHz至13.1GHz,除頻範圍為7.2GHz,消耗功率為25.5mW。
第三個主題主要設計LC-tank注入鎖定除二除頻器,經由電流式注入LC-tank推倒可知,除頻器之除頻範圍與注入訊號振幅成正比,與品質因數Q成反比,因此在LC-tank使用電阻並聯架構,降低LC-tank之Q值,增加除頻範圍。輸入端使用currrent bleeding方式增加注入訊號之振幅以及採用Marchand Balun達到阻抗匹配減少注入訊號之反射。電路以TSMC 0.18 um製程完成晶片製作,量測輸入頻率為11.7GHz至16.2GHz,除頻範圍為4.5GHz,消耗功率為4.8mW。
最後一個主題主要設計環形注入鎖定除三除頻器,除三除頻器由混頻器與注入鎖定除二除頻器所構成,為了解決混頻器輸出訊號功率受到下一級除二電路負載效應導致訊號過小的問題,使用gm-boosted共閘極放大器放大混頻器輸出訊號,使得注入除二電路之訊號不受到負載效應之影響,因此提高整體除三電路之除頻範圍。量測操作頻率為12.9 GHz至18.7GHz,注入鎖定除頻範圍為36.7%,消耗功率為28.9 mW。
URI: http://hdl.handle.net/11455/6651
其他識別: U0005-1708201114175100
Appears in Collections:電機工程學系所

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