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Preparation of transparent conductive ZnO: Al film by sol-gel method
|關鍵字:||sol-gel;溶膠凝膠;AZO;annealing;H plasma;氧化鋅摻鋁;退火;氫電漿||出版社:||電機工程學系所||引用:|| 戴寶通，鄭晃忠，太陽能電池技術手冊，台灣電子材料與元件協會發行出版，2008.  J. J. Wang, J. X. Liu,” The Investigation and Development of Solar Cells and Materials”,Journal of Zhejiang Wanli University, vol. 19, 2006.  L. L. Kazmerski, ” Solar Photovoltaics R&D at the Tipping Point: A 2005 Technology Overview”, Journal. of Electron Spectroscopy and Related Phenomena, vol. 150, p. 105, 2006.  G. Gordillo, C. Calderon, ”Properties of ZnO thin films prepared by reactive evaporation”, Solar Energy Materials Solar Cells, vol. 69, p. 251,2001.  P. Nunes, D. Costa, E. Fortunato, R. Martins, “Performances presented by zinc oxide thin films deposited by R.F. magnetron sputtering”, Vacuum, vol. 64, p. 293, 2002.  S. M. Hyun, K. Hong, B. H. Kim, ”Preparation and characterization of Al doped ZnO transparent conducting thin film by sol–gel processing”, Journal of Korean Ceramic Society, vol. 33, p.149, 1996.  C. 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本論文主要研究以溶膠凝膠法製備摻鋁氧化鋅(AZO)透明導電膜。其鋁與鋅的成分比為1.0 at. %，以Eagle 2000玻璃為AZO薄膜的基板，基板的應力點為666 ℃。在退火溫度操作於400~800 ℃，結果發現退火溫度在700 ℃時的電阻率為最佳，其阻值比其它退火溫度低10倍以上，而在可見光區超過86 %的高穿透率，與其它退火溫度的穿透率相比約少了有3~4 %。
製作成AZO薄膜後，以不同的射頻功率進行30分鐘電漿處理實驗，結果發現射頻功率25~100 W氫電漿處理後的AZO薄膜，其電阻率與未電漿處理相比至少減少了65 %。
The main purpose of this thesis is to fabricate the transparent conductive AZO (ZnO: Al) film by sol-gel method, the atomic ratio of Al and Zn in AZO film is 1 to 100. The films were spin coated on Eagle 2000 glass with strain point 666 ℃. The annealing temperature is operated between 400 to 800 ℃ which is across the strain point. The result shows that 700 ℃ anneal has the best resistivity, but reveals the worst transmittance in the visible region. The resistivity is more than ten times lower than that of the samples receiving other annealing temperature. The transmittance of 700 ℃ annealed samples is more than 86 % which is about 3 to 4 % less than that of samples with different anneal temperatures.
Different annealing ambient is also carried out in this research , the samples under vacuum annealing reveals the highest transmittance; samples annealed in air reveals a better surface in smoothness , while the samples annealed in nitrogen has the best crystallinity and lowest resistivity.
In addition, the cooling down process is modified with three different schemes; the slow cooling in vacuum can lead to the lowest resistivity. The improvement can be as high as 30 to 180 folds.
AZO films were then treated in hydrogen plasma with different RF power from 25 W to 100 W. The resistivity can be reduced to at least 65 % with hydrogen plasma treatment.
Finally, the samples were aged in air at room temperature for 30 days to see the stability of the AZO films. For both plasma treated and un-treated samples, the resistivity all increased two folds after 30 days. This aging result implicates that hydrogen plasma treatment can also effectively prevent the aging of the AZO films treatment AZO thin films.
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