Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/67577
DC FieldValueLanguage
dc.contributor.authorYu, R.S.en_US
dc.contributor.author薛富盛zh_TW
dc.contributor.authorLiang, S.C.en_US
dc.contributor.authorLu, C.J.en_US
dc.contributor.authorTasi, D.C.en_US
dc.contributor.authorShieu, F.S.en_US
dc.date2007zh_TW
dc.date.accessioned2014-06-11T05:53:38Z-
dc.date.available2014-06-11T05:53:38Z-
dc.identifier.issn0003-6951zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/67577-
dc.description.abstractThis letter reports a technique for increasing the carrier concentration and the conductivity of the p-type CuAlO2 through doping the material with nitrogen. The x-ray photoelectron spectroscopy and the optical band gap analyses suggested that the nitrogen atoms occupying the interstitial sites of the delafossite structure provided the p-type CuAlO2 with an impurity energy level in the energy gap. It was also found that the N-doped CuAlO2 film had its optimum conduction properties when the dopant level reached 1.1 at. %. Here, the carrier concentration was raised from 4.81x10(16) in the undoped film to 2.13x10(17) cm(-3) in the doped film, and the corresponding film's conductivity was increased from 3.8x10(-2) to 5.4x10(-2) (Omega cm)(-1), as compared with the undoped CuAlO2 film. (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USzh_TW
dc.relationApplied Physics Lettersen_US
dc.relation.ispartofseriesApplied Physics Letters, Volume 90, Issue 19.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.2679233en_US
dc.subjectchemical-vapor-depositionen_US
dc.subjectthin-filmsen_US
dc.subjectband-gapen_US
dc.titleCharacterization and optoelectronic properties of p-type N-doped CuAlO2 filmsen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1063/1.2679233zh_TW
item.languageiso639-1en_US-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairetypeJournal Article-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextno fulltext-
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