Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/67578
標題: Role of extrinsic atoms on the morphology and field emission properties of carbon nanotubes
作者: Chan, L.H.
薛富盛
Hong, K.H.
Xiao, D.Q.
Hsieh, W.J.
Lai, S.H.
Shih, H.C.
Lin, T.C.
Shieu, F.S.
Chen, K.J.
Cheng, H.C.
關鍵字: emitters;growth;films
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 82, Issue 24, Page(s) 4334-4336.
摘要: 
Extrinsic atoms were doped into multiwalled carbon nanotubes (MWCNTs) using microwave plasma-enhanced chemical vapor deposition. Doped nitrogen atoms alter the original parallel graphenes into highly curved ones including some fullerene-like structures. Doped nitrogen atoms could replace carbon atoms in MWCNTs and therefore increase the electronic density that enhances the electron field emission properties. On the other hand, the incorporation of boron into the carbon network apparently increases the concentration of electron holes that become electron traps and eventually impedes the electron field emission properties. Fowler-Nordheim plots show two different slopes in the curve, indicating that the mechanism of field emission is changed from low to high bias voltages. beta values could be increased by an amount of 42% under low bias voltages and 60% under high bias voltages in the N-doped MWCNTs, but decreased by an amount of 8% under low bias region and 68% under high bias voltage in the B-doped MWCNTs. (C) 2003 American Institute of Physics.
URI: http://hdl.handle.net/11455/67578
ISSN: 0003-6951
DOI: 10.1063/1.1579136
Appears in Collections:工學院

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