Please use this identifier to cite or link to this item:
|標題:||Low temperature sintering and microwave dielectric properties of Ba2Ti9O20 ceramics with 3ZnO-B2O3 addition||作者:||Lee, Y.C.
|關鍵字:||Ba2Ti9O20;low temperature sintering;dielectric constant;quality;factor;temperature coefficient of resonant frequency;resonator||Project:||Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers||期刊/報告no：:||Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Volume 41, Issue 10, Page(s) 6049-6053.||摘要:||
Boron and zinc oxide (ZnBO) glass added in dielectric materials have drawn a great attention recently due to the low firing temperature. Microwave dielectric properties of the Ba2Ti9O20-based ceramics with ZnBO addition up to 3wt% were investigated at the sintering temperatures ranging from 900 to 960degreesC. Effects of the ZnBO addition on the bulk density, microstructure, and dielectric properties of the Ba2TiO9O20-based ceramics at microwave frequency were elucidated. X-ray diffraction (XRD) results show the presence of five crystalline phases. Ba2Ti9O20, BaZr(BO3)(2), BaTi3O7, BaZrO3 and Zn2SiO4 in the sintered ceramics, depending upon the amount of ZnBO addition, Optimum dielectric properties were obtained for the Ba2Ti9O20-based ceramic with 1 wt% ZnBO addition and sintered in air at 940degreesC for 2h, having the dielectric properties: Q = 1137 (Q x f = 8300), epsilon(r) value = 27.3, and tau(f) = 2.5 ppm/degreesC.
|Appears in Collections:||工學院|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.