Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/67611
DC FieldValueLanguage
dc.contributor.authorYu, R.S.en_US
dc.contributor.author薛富盛zh_TW
dc.contributor.authorTasi, D.C.en_US
dc.contributor.authorChu, R.S.en_US
dc.contributor.authorHuang, C.J.en_US
dc.contributor.authorShieu, F.S.en_US
dc.date2007zh_TW
dc.date.accessioned2014-06-11T05:53:43Z-
dc.date.available2014-06-11T05:53:43Z-
dc.identifier.issn0013-4651zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/67611-
dc.description.abstractThe anisotropic relaxation behavior of the compressive residual stress of delafossite CuAlO2 film was identified to take place on silicon substrate, on which the film was grown. Experimental results suggest that in order to release the internal compressive residual stress of the CuAlO2 film, CuO hillocks would be favored to grow on the film surface. It was also proposed that because of the structural anisotropic nature associated with the delafossite CuAlO2, the compressive residual stress was released first by breaking the O-Cu-O bonds of the dumbbell layers and subsequently by the diffusion of Cu and O atoms along the a- axis direction on the close-packed Cu layers, suggesting that the c-axis direction across the AlO6 octahedral layers has a greater resistance to compressive residual stress. (c) 2007 The Electrochemical Society.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of the Electrochemical Societyen_US
dc.relation.ispartofseriesJournal of the Electrochemical Society, Volume 154, Issue 12, Page(s) H1014-H1017.en_US
dc.relation.urihttp://dx.doi.org/10.1149/1.2790284en_US
dc.subjectchemical-vapor-depositionen_US
dc.subjectthin-filmsen_US
dc.subjectelectronic-structureen_US
dc.subjectoxidesen_US
dc.subjectsrcu2o2en_US
dc.subjectcugao2en_US
dc.titleAnisotropic relaxation Behavior of Compressive residual stress in delafossite CuAlO2en_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1149/1.2790284zh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextno fulltext-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.openairetypeJournal Article-
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