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|標題:||Phase transformation and optoelectronic properties of p-type CuAlO2 thin films||作者:||Yu, R.S.
|關鍵字:||band-gap;optical-properties;conducting oxides;transparent;cu;deposition;aluminum;crystal||Project:||Journal of the Electrochemical Society||期刊/報告no：:||Journal of the Electrochemical Society, Volume 154, Issue 9, Page(s) H838-H843.||摘要:||
Annealed Cu-Al-O films showed marked structural changes and differing optoelectronic properties with varying annealing temperature. Results of X-ray diffraction (XRD) demonstrated that CuO and CuAl2O4 were the intermediate reaction phases. XRD also showed that the phase grown above 800 degrees C annealing temperature was pure CuAlO2 phase. Cross-sectional high-resolution transmission electron microscopy revealed that the crystallization behavior of the Cu-Al-O films belonged to an outward model. The optimum properties of delafossite structure CuAlO2 film was attained after annealing at 800 degrees C. The surface morphology of CuAlO2 had a cell-like surface appearance and the grain sizes were approximately 20-100 nm. The optical direct bandgap of the CuAlO2 film was estimated to be 3.11 eV. Hall effect measurements revealed that the CuAlO2 film belonged to the p-type conduction category, with a carrier concentration of 4.81 x 1016 cm(-3) and the conductivity of 3.8 x 10(-2) ( Omega cm )(-1). The optoelectronic properties of the Cu-Al-O system are dominated by the delafossite CuAlO2. (c) 2007 The Electrochemical Society.
|Appears in Collections:||工學院|
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