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標題: Phase transformation and optoelectronic properties of p-type CuAlO2 thin films
作者: Yu, R.S.
Lu, C.J.
Tasi, D.C.
Liang, S.C.
Shieu, F.S.
關鍵字: band-gap;optical-properties;conducting oxides;transparent;cu;deposition;aluminum;crystal
Project: Journal of the Electrochemical Society
期刊/報告no:: Journal of the Electrochemical Society, Volume 154, Issue 9, Page(s) H838-H843.
Annealed Cu-Al-O films showed marked structural changes and differing optoelectronic properties with varying annealing temperature. Results of X-ray diffraction (XRD) demonstrated that CuO and CuAl2O4 were the intermediate reaction phases. XRD also showed that the phase grown above 800 degrees C annealing temperature was pure CuAlO2 phase. Cross-sectional high-resolution transmission electron microscopy revealed that the crystallization behavior of the Cu-Al-O films belonged to an outward model. The optimum properties of delafossite structure CuAlO2 film was attained after annealing at 800 degrees C. The surface morphology of CuAlO2 had a cell-like surface appearance and the grain sizes were approximately 20-100 nm. The optical direct bandgap of the CuAlO2 film was estimated to be 3.11 eV. Hall effect measurements revealed that the CuAlO2 film belonged to the p-type conduction category, with a carrier concentration of 4.81 x 1016 cm(-3) and the conductivity of 3.8 x 10(-2) ( Omega cm )(-1). The optoelectronic properties of the Cu-Al-O system are dominated by the delafossite CuAlO2. (c) 2007 The Electrochemical Society.
ISSN: 0013-4651
DOI: 10.1149/1.2756991
Appears in Collections:工學院

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