Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/67636
標題: Preparation and optical properties of Ta2O5-x thin films
作者: Pai, Y.H.
薛富盛
Chou, C.C.
Shieu, F.S.
關鍵字: tantalum pentoxide;RF magnetron sputtering;optical properties;tantalum oxide-films;deposition;capacitors;coatings;beam
Project: Materials Chemistry and Physics
期刊/報告no:: Materials Chemistry and Physics, Volume 107, Issue 2-3, Page(s) 524-527.
摘要: 
Thin films of tantalum pentoxide (Ta2O5-x) were deposited on glass substrates by RF magnetron sputtering under different Ar/O-2 flow ratios. Characterization of the coatings was investigated by UV-vis spectroscopy, ellipsometry (at a wavelength of 632.8 nm), Fourier transform infrared (FTIR) spectroscopy, atomic force microscope (AFM), and transmission electron microscope energy dispersive spectrometer (TEMEDS). It was obtained that the Ta2O5-x films produced with different Ar/O-2 ratios ranging from 10/6 to 8/10 exhibit good visible optical transmissions, 80-90%. The optical band gap of the films from 10/6 to 8/10 decreased from 4.25 to 3.70 eV from the transmission spectra. The film thickness decreased from 108.1 to 99.4 nm and refractive index increased from 2.02 to 2.15 for the films produced with different Ar/O-2 ratios ranging from 10/6 to 8/10. In addition, the results indicate that the films prepared at high Ar/O-2 flow ratios (8/10) have featureless peak of suboxide for FTIR spectra and exhibit atomic ratio Ta:O = 1:2.41 for TEMEDS analysis. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/67636
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2007.08.032
Appears in Collections:工學院

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