Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/67656
DC FieldValueLanguage
dc.contributor.authorTsai, D.C.en_US
dc.contributor.author張守一zh_TW
dc.contributor.authorHuang, Y.L.en_US
dc.contributor.authorLin, S.R.en_US
dc.contributor.authorJung, D.R.en_US
dc.contributor.authorChang, S.Y.en_US
dc.contributor.authorShieu, F.S.en_US
dc.contributor.author薛富盛zh_TW
dc.date2011zh_TW
dc.date.accessioned2014-06-11T05:53:47Z-
dc.date.available2014-06-11T05:53:47Z-
dc.identifier.issn0169-4332zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/67656-
dc.description.abstractIn this study, 15 nm-thick sputter-deposited TiVCr alloy thin films were developed as diffusion barrier layers for Cu interconnects. The TiVCr alloy film tends to form a solid solution and a simple crystal structure from the constituted elements. Under TEM, the 15 nm-thick as-deposited TiVCr alloy film was observed to have a dense semi-amorphous or nanocrystalline structure. In conjunction with X-ray diffraction, transmission electron microscopy, and energy-dispersive spectroscopy analyses, the Si/TiVCr/Cu film stack remained stable at a high temperature of 700 degrees C for 30 min. The electrical resistance of Si/TiVCr/Cu film stack remained as low as the as-deposited value. These indicated that the mixed TiVCr refractory elements' alloy barrier layer is very beneficial to prevent Cu diffusion. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationApplied Surface Scienceen_US
dc.relation.ispartofseriesApplied Surface Science, Volume 257, Issue 11, Page(s) 4923-4927.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.apsusc.2010.12.149en_US
dc.titleDiffusion barrier performance of TiVCr alloy film in Cu metallizationen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.apsusc.2010.12.149zh_TW
item.grantfulltextnone-
item.fulltextno fulltext-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeJournal Article-
Appears in Collections:工學院
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