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標題: 應用於超寬頻與MIMO系統之矽鍺功率放大器設計與製作
Design and Implementation of SiGe Power Amplifier for UWB & MIMO System Application
作者: 陳楷順
Chen, Kai-Shuen
關鍵字: Ultra Wideband, MIMO;超寬頻;power amplifier;diode linearizer;SiGe BiCMOS;LC-ladder broadband matching;Dynamic bias control;多天線收發系統;功率放大器;二極體線性器;寬頻匹配;動態偏壓
出版社: 電機工程學系所
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Hara, “An HBT MMIC Power Amplifier with an Integrated Diode Linearizer for Low-Voltage Portable Phone Application”, IEEE J. of Solid-State Circuits, Vol. 33, No. 9, pp. 1290-1296, 1998. [18] Jorge Aguirre and Calvin Plett, “A 0.1 - 50 GHz SiGe HBT distributed amplifier employing constant-k m-derived sections,” IEEE MTT-S Int. Microwave Symp. Dig., vol.2, 2003, pp. 923-926. [19] Ismail, A.; Abidi, A.A., “A 3-10-GHz low-noise amplifier with wideband LC-ladder matching network,”Solid-State Circuits, IEEE Journal of Volume 39, Issue 12, Dec. 2004 [20] Dedieu, H.; Dehollain, C.; Neirynck, J.; Rhodes, G., “A new method for solving broadband matching problems,”Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on see also Circuits and Systems I: Regular Papers, IEEE Transactions on Volume 41, Issue 9, Sept. 1994 [21] Chih-Yun Liu; Yi-Jan Emery Chen; Deukhyoun Heo, “Impact of bias schemes on Doherty power amplifiers”Circuits and Systems, 2005. ISCAS 2005. 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KENINGTON [29] Ming-Jyh Hwu; Hsien-Chin Chiu; Shih-Cheng Yang; Yi-Jen Chan, “A novel double-recessed 0.2-/spl mu/m T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication“Electron Device Letters, IEEE Volume 24, Issue 6, June 2003 [30] Hsien-Chin Chiu; Shih-Cheng Yang; Cheng-Kuo Lin; Ming-Jyh Hwu; Yi-Jen Chan,“0.2-/spl mu/m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications“Electron Devices, IEEE Transactions on Volume 50, Issue 7, July 2003 [31] Reimer, C.J.; Smy, T.; Walkey, D.J.; Beggs, B.C.; Surridge, R., “A simulation study of IC layout effects on thermal management of die attached GaAs ICs“Components and Packaging Technologies, IEEE Transactions on Volume 23, Issue 2, June 2000 [31] Hyoung-Seok Oh; Taeksang Song; Sang-Hyun Baek; Euisik Yoon; Choong-Ki Kim, “A fully integrated 1 V, +9.5 dBm, 43%-PAE injection-locked Class-E power amplifier for wireless sensor network“Radio and Wireless Symposium, 2006 IEEE 17-19 Jan. 2006
由於進來晶片整合的重要性日益漸增,本論文使用與矽製程整合度佳的TSMC 0.35 m BiCMOS製程,提出三個功率放大器電路的設計與製作,分別針對線性度,頻寬與效率來設計,並分別應用在超寬頻系統與多天線收發系統的頻段上。線性度改善方面,工作頻段為2.4Ghz,使用BiFET電晶體架構與二極體線性器偏壓設計完成。寬頻改善方面,工作頻段為3.1-5Ghz,使用LC梯型匹配設計達到寬頻帶效果。效率改善方面,工作頻段為2.4Ghz,使用動態偏壓電路來改善較小輸入功率的效率。由於電路中,電晶體的特性佔了很重要的部份,因此論文中也分析兩顆並聯電晶體的特性並應用到電路上。

Due to the process progress of IC technology, the power amplifier(PA) plays a important role in wireless communication. Hence the thesis adopts 0.35um SiGe BiCMOS technology to design PA. Firstly the device characteristic of transistor is stydied in CH3. Secondly the design, implementation and measurement of three PAs are mentioned in CH4. The object of this thesis concentrated on linearity, broadband and efficiency for UWB & MIMO system application. The first PA uses BiFET and diode linearizer to improve linearity. The second PA uses LC-ladder matching to achieve broadband behavior. The third PA uses dynamic bias control to increase efficiency.
其他識別: U0005-2407200614120900
Appears in Collections:電機工程學系所

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