Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/67875
標題: High LO-RF isolation of zero-IF mixer in 0.18 mu m CMOS technology
作者: Hsu, H.M.
Lee, T.H.
關鍵字: double-balance;LO-RF isolation;low voltage;sub-harmonic mixer;zero-IF receiver;receiver front-end;micromixer
Project: Analog Integrated Circuits and Signal Processing
期刊/報告no:: Analog Integrated Circuits and Signal Processing, Volume 49, Issue 1, Page(s) 19-25.
摘要: 
In this study, we introduce a zero-IF sub-harmonic mixer with high isolation in the 5 GHz band using 0.18 mu m CMOS technology. Placing an LC-Tank between the class AB stage and the mixer core improves the isolation between the LO to RF at low supply voltage. The measured isolation is 48 dB between the LO and RF ports, and the 9.5 dB conversion gain is achieved with a supply voltage of 7 mA at 2.5 V. In order to alleviate the degradation of linearity due to the high conversion gain, we adopt the class AB stage as RF input stage. The measured IIP3 is -7.5 dBm.
URI: http://hdl.handle.net/11455/67875
ISSN: 0925-1030
DOI: 10.1007/s10470-006-8699-z
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