Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/6788
標題: 在化學機械研磨中研磨壓力與轉速對研磨率與均勻性之探討
Study the Influence of Pressure and rotation rate to the Removal Rate and Uniformity in Chemical-Mechanical Polishing
作者: 羅志威
Luo, Jhih-Wei
關鍵字: Chemical Mechanical Polishing;化學機械研磨;Polishing head pressure;Polishing rotation speed;Uniformity;研磨頭壓力;研磨轉速;均勻性
出版社: 電機工程學系所
引用: [1] F.W. Preston, “The theory and design of plate glass polishing machines,” JSoc Glass Technol, Vol. 11, p. 214-256 , 1927. [2] N. J. Brown, P. C. Baker, and R. T. Maney, “Optical polishing of metals,” Proc. SPIE., p. 306, 1981. [3] A. R. Baker, “The Origin of the Edge Effects in CMP,” Proc Electrochem Soc, Vol. 96, p. 228–237, 1997. [4] S. R. Runnels and P. Renteln, “Modeling the effect of polish pad deformation on wafer surface stress distributions during chemical mechanical polishing,” Dielect Sci Technol, Vol. 6, p. 110–121, 1993. [5] G. Fu, A. Chandra, J. Electron., “A Model for Wafer Scale Variation of Removal Rate in Chemical Mechanical Polishing Based on Elastic Pad Deformation,” J. Electron. Mater., Vol. 30, p. 400, 2001. [6] T. K. Yu, C. C. Yu, M. Orlowski, “A statistical polishing pad model for chemical mechanical polish,” IEDM Tech. Dig., p. 865-868, 1993. [7] D. Wang, J. Lee, K. Holland, T. Bibby, S. Beaudoin, and T. Cale, “Von Mises stress in chemical-mechanical polishing processes,” J. Electrochem Soc, Vol. 144, p. 1122–1127, 1997. [8] C. Srinivasa-Murthy, D. Wang, S. P. Beaudoin, T. Bibby, K. Holland, and T. Cale, “Stress Distribution in Chemical-Mechanical Polishing,” ThinSolid Films, Vol. 308, p. 533–537, 1997. [9] G. Byrne, B. Mullany, P. Young, “The effect of pad wear on the chemical– mechanical polishing of silicon wafers,” CIRP Ann. Manuf. Technol., Vol. 48, p. 143, 1999. [10] W. T. Tseng, Y. H. Wang, and J. H. Chin, “Effects of Film Stress on the Chemical Mechanical Polishing Process,” Journal of Electrochemical Society, Vol. 146, p. 4273-4280, 1999. [11] 前田和夫(鄭政忠譯;2003) “半導體製造裝置,” 普林斯頓國際有限公司, p. 22-39, 2003. [12] S. Sivaram, K. Monnig, R. Tolles, A. Maury, and R. Leggett, “Planarizing interlevel dielectrics by chemical-mechanical polishing,” The Electronchemical Society, Inc., p. 606, 1991. [13] R. Jairath, M. Desai, M. Stell, R. Tolles, and D. Scherber Brewer,Mat. “Consumables for the chemical mechanical polishing (CMP) of dielectrics and conductors,” Res. Soc. Symp. Proc., Vol. 337, p. 121-131, 1994. [14] Birkholz, M., “Thin Film Analysis by X-Ray Scattering,” Wiley, p. 326, 2006. [15] L. M. Cook, “Chemical Processes in Glass Polishing,” Journal of Non-Crystalline Solid, Vol. 120, p. 152-171, 1990. [16] T. K. Yu, C. C. Yu, M. Orlowski, “A statistical polishing pad model for chemical mechanical polish,” IEDM Tech. Dig., p. 865-868, 1993. [17] F.G. Shi, B. Zhao, “Modeling of chemical-mechanical polishing with soft pads,” Appl. Phys., Vol. 67, p. 249-252, 1998. [18] W.T. Tseng, Y.T. Wang, “Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes,” J. Electroche. Soc., Vol. 144, p. L15-L17, 1997. [19] J. Tichy, J. A. Levert, L. Shan, S. Danyluk, “Contact Mechanics and Lubrication Hydrodynamics of Chemical Mechanical Polishing,” J.Electrochem. Soc., Vol. 146, p. 1523-1528, 1999. [20] G.P. Muldowney, J.J. Hendron, T.T. Crkvenac, “The impact of slurry backmixing in determining optimal CMP process condition,” Rohm and Haas Electronic Materials CMP Technology, DE 19713 USA, 2004. [21] Guanghui Fu, Abhijit Chandra, “The relationship between wafer surface pressure and wafer backside loading in Chemical Mechanical Polishing,” Elsevier B.V.,Thin Solid Films, p. 218, 2005. [22] S.P.Timoshenko, S.Woinowsky, “Theory of Plates and Shells,” 2nd ed.,McGraw-Hill, New York, p. 56, 1959. [23] Folkmer B., Steniner P. and Lang W., “A Pressure Sensor Based on a Nitride Membrane Using Single-Crystalline Piezoresistors,” Sensors and Actuators A54, p. 488-492, 1996. [24] 莊達人, “VLSI 製造技術,” 高立出版社, p. 249, 1999. [25] Yota J., Janani M., Camilletti L. E., Kar-Roy A., Liu Q. Z., Nguyen C., Woo M. D., “Comparison between HDP-CVD and PECVD Silicon Nitride for Advanced Interconnect Applications”, IEEE, p. 76-78, 2000. [26] Applied技術處, “Applied material技術報告,” Applied material, p. 25-26, 2008 [27] G. Fu and A. Chandra, “The Relationship Between Wafer Surface Pressure and Wafer Backside Loading in Chemical Mechanical Polishing,” Thin Solid Films, Vol. 474, p. 217-221, 2005. [28] 顏嘉良,”化學機械拋光有限元素力學分析與多尺度接觸力學模式之建立,”成功大學碩士論文, p. 35, p. 48, p. 52, 2007。 [29] K. L. Johnson, “Contact mechanics,” Cambridge University Press,Cambridge, p. 406-416, 1989. [30] Luo, Jianfeng, Dornfeld, David A, “Wafer-Scale CMP Modeling of With-in Wafer Non-Uniformity,” University of California at Berkeley, 2002-2003 LMA Reports, p. 6, 2003. [31] H. Hocheng , H.Y. Tsai , M.S. Tsai, “Effects of kinematic variables on nonuniformity in chemical mechanical planarization,” Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC, p. 14-19, 1999.
摘要: 
化學機械研磨是積體電路製造當中極其重要的步驟。由於線寬變小、面積更小以及晶體數目多是未來晶片發展的趨勢,為了要滿足這些條件就必須使用多層之導線架構,而多層之導線架構中每一層都必須進行平坦化製程,使用化學機械研磨可將材料表面平坦化,因此化學機械研磨已經是各大廠商能突破新製程的重要技術。
本次研究為改變不同之研磨頭壓力與研磨轉速,觀察其在研磨率與均勻性之變化性,再輔以均勻性指標來調整研磨率之均勻性,以期能夠在未來新製程不斷演變下,能夠有能力找出最佳設定之參數。根據實驗之結果,本研究所探討之結論可有效找出最佳之化學機械研磨參數,改善研磨率之均勻性。

It is that an integrated circuit makes the extremely important step in Chemical Mechanical Polishing. Because line wide to diminish, area little and crystal future chip development trend, must use the multi-layer wire structure in order to meet these conditions, and every layer must melt flatness in the multi-layer wire structure, use Chemical Mechanical Polishing, come until material surface smooth to take, so Chemical Mechanical Polishing own through every large manufacturer can break through, make important new technology of process.
This research for changing with head pressure and polishing rotation speed, to observe the changes of removal rate and uniformity, then use the uniformity's indicator to adjust the uniformity of removal rate. Expect, when the process of VLSI develop constantly newly in future, can have the ability to find out the best parameter set up. According to the result of the experiment, the conclusion of this research can find out the best Chemical-Mechanical Polsihing's parameter effectively, improve the uniformity of the removal rate.
URI: http://hdl.handle.net/11455/6788
其他識別: U0005-1908201115095300
Appears in Collections:電機工程學系所

Show full item record
 

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.