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Study the Influence of Pressure and rotation rate to the Removal Rate and Uniformity in Chemical-Mechanical Polishing
|關鍵字:||Chemical Mechanical Polishing;化學機械研磨;Polishing head pressure;Polishing rotation speed;Uniformity;研磨頭壓力;研磨轉速;均勻性||出版社:||電機工程學系所||引用:|| F.W. Preston, “The theory and design of plate glass polishing machines,” JSoc Glass Technol, Vol. 11, p. 214-256 , 1927.  N. J. Brown, P. C. Baker, and R. T. Maney, “Optical polishing of metals,” Proc. SPIE., p. 306, 1981.  A. R. Baker, “The Origin of the Edge Effects in CMP,” Proc Electrochem Soc, Vol. 96, p. 228–237, 1997.  S. R. Runnels and P. Renteln, “Modeling the effect of polish pad deformation on wafer surface stress distributions during chemical mechanical polishing,” Dielect Sci Technol, Vol. 6, p. 110–121, 1993.  G. Fu, A. Chandra, J. Electron., “A Model for Wafer Scale Variation of Removal Rate in Chemical Mechanical Polishing Based on Elastic Pad Deformation,” J. Electron. Mater., Vol. 30, p. 400, 2001.  T. K. Yu, C. C. Yu, M. Orlowski, “A statistical polishing pad model for chemical mechanical polish,” IEDM Tech. Dig., p. 865-868, 1993.  D. Wang, J. Lee, K. Holland, T. Bibby, S. Beaudoin, and T. Cale, “Von Mises stress in chemical-mechanical polishing processes,” J. Electrochem Soc, Vol. 144, p. 1122–1127, 1997.  C. Srinivasa-Murthy, D. Wang, S. P. Beaudoin, T. Bibby, K. Holland, and T. Cale, “Stress Distribution in Chemical-Mechanical Polishing,” ThinSolid Films, Vol. 308, p. 533–537, 1997.  G. Byrne, B. Mullany, P. Young, “The effect of pad wear on the chemical– mechanical polishing of silicon wafers,” CIRP Ann. Manuf. Technol., Vol. 48, p. 143, 1999.  W. T. Tseng, Y. H. Wang, and J. H. Chin, “Effects of Film Stress on the Chemical Mechanical Polishing Process,” Journal of Electrochemical Society, Vol. 146, p. 4273-4280, 1999.  前田和夫(鄭政忠譯；2003) “半導體製造裝置,” 普林斯頓國際有限公司, p. 22-39, 2003.  S. Sivaram, K. Monnig, R. Tolles, A. Maury, and R. Leggett, “Planarizing interlevel dielectrics by chemical-mechanical polishing,” The Electronchemical Society, Inc., p. 606, 1991.  R. Jairath, M. Desai, M. Stell, R. Tolles, and D. Scherber Brewer,Mat. “Consumables for the chemical mechanical polishing (CMP) of dielectrics and conductors,” Res. Soc. Symp. Proc., Vol. 337, p. 121-131, 1994.  Birkholz, M., “Thin Film Analysis by X-Ray Scattering,” Wiley, p. 326, 2006.  L. M. Cook, “Chemical Processes in Glass Polishing,” Journal of Non-Crystalline Solid, Vol. 120, p. 152-171, 1990.  T. K. Yu, C. C. Yu, M. Orlowski, “A statistical polishing pad model for chemical mechanical polish,” IEDM Tech. Dig., p. 865-868, 1993.  F.G. Shi, B. Zhao, “Modeling of chemical-mechanical polishing with soft pads,” Appl. Phys., Vol. 67, p. 249-252, 1998.  W.T. Tseng, Y.T. Wang, “Re-examination of pressure and speed dependences of removal rate during chemical-mechanical polishing processes,” J. Electroche. Soc., Vol. 144, p. L15-L17, 1997.  J. Tichy, J. A. Levert, L. Shan, S. Danyluk, “Contact Mechanics and Lubrication Hydrodynamics of Chemical Mechanical Polishing,” J.Electrochem. Soc., Vol. 146, p. 1523-1528, 1999.  G.P. Muldowney, J.J. Hendron, T.T. Crkvenac, “The impact of slurry backmixing in determining optimal CMP process condition,” Rohm and Haas Electronic Materials CMP Technology, DE 19713 USA, 2004.  Guanghui Fu, Abhijit Chandra, “The relationship between wafer surface pressure and wafer backside loading in Chemical Mechanical Polishing,” Elsevier B.V.,Thin Solid Films, p. 218, 2005.  S.P.Timoshenko, S.Woinowsky, “Theory of Plates and Shells,” 2nd ed.,McGraw-Hill, New York, p. 56, 1959.  Folkmer B., Steniner P. and Lang W., “A Pressure Sensor Based on a Nitride Membrane Using Single-Crystalline Piezoresistors,” Sensors and Actuators A54, p. 488-492, 1996.  莊達人, “VLSI 製造技術,” 高立出版社, p. 249, 1999.  Yota J., Janani M., Camilletti L. E., Kar-Roy A., Liu Q. Z., Nguyen C., Woo M. D., “Comparison between HDP-CVD and PECVD Silicon Nitride for Advanced Interconnect Applications”, IEEE, p. 76-78, 2000.  Applied技術處, “Applied material技術報告,” Applied material, p. 25-26, 2008  G. Fu and A. Chandra, “The Relationship Between Wafer Surface Pressure and Wafer Backside Loading in Chemical Mechanical Polishing,” Thin Solid Films, Vol. 474, p. 217-221, 2005.  顏嘉良,”化學機械拋光有限元素力學分析與多尺度接觸力學模式之建立,”成功大學碩士論文, p. 35, p. 48, p. 52, 2007。  K. L. Johnson, “Contact mechanics,” Cambridge University Press,Cambridge, p. 406-416, 1989.  Luo, Jianfeng, Dornfeld, David A, “Wafer-Scale CMP Modeling of With-in Wafer Non-Uniformity,” University of California at Berkeley, 2002-2003 LMA Reports, p. 6, 2003.  H. Hocheng , H.Y. Tsai , M.S. Tsai, “Effects of kinematic variables on nonuniformity in chemical mechanical planarization,” Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC, p. 14-19, 1999.||摘要:||
It is that an integrated circuit makes the extremely important step in Chemical Mechanical Polishing. Because line wide to diminish, area little and crystal future chip development trend, must use the multi-layer wire structure in order to meet these conditions, and every layer must melt flatness in the multi-layer wire structure, use Chemical Mechanical Polishing, come until material surface smooth to take, so Chemical Mechanical Polishing own through every large manufacturer can break through, make important new technology of process.
This research for changing with head pressure and polishing rotation speed, to observe the changes of removal rate and uniformity, then use the uniformity's indicator to adjust the uniformity of removal rate. Expect, when the process of VLSI develop constantly newly in future, can have the ability to find out the best parameter set up. According to the result of the experiment, the conclusion of this research can find out the best Chemical-Mechanical Polsihing's parameter effectively, improve the uniformity of the removal rate.
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