Please use this identifier to cite or link to this item:
|標題:||Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers||作者:||Hao, O.Y.
|關鍵字:||thin-films;temperature;fabrication;resistance||Project:||Applied Physics Letters||期刊/報告no：:||Applied Physics Letters, Volume 88, Issue 11.||摘要:||
Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850 degrees C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700 degrees C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700 degrees C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy. (c) 2006 American Institute of Physics.
|Appears in Collections:||期刊論文|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.