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|標題:||Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section||作者:||Lin, Y.F.
|關鍵字:||field-effect transistors;electrical-transport;room-temperature;schottky diodes;thin-films;fabrication;growth||Project:||Applied Physics Letters||期刊/報告no：:||Applied Physics Letters, Volume 90, Issue 22.||摘要:||
Single crystalline ZnO nanowires (NWs) with a circular cross section and similar to 40 nm in diameter have been synthesized and utilized to fabricate two-contact ZnO NW devices. The electrical properties of the NW devices can be categorized into two classes according to the magnitude of their room-temperature resistances. I-V curves of low-resistance devices exhibit downward bending features and their temperature dependent resistances demonstrate thermal activation transport in the ZnO NWs. The high-resistance NW devices can be modeled as back-to-back Schottky contacts and the electron transport through the contacts reveals a variable-range-hopping mechanism. (C) 2007 American Institute of Physics.
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