Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68034
標題: Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section
作者: Lin, Y.F.
Jian, W.B.
Wang, C.P.
Suen, Y.W.
Wu, Z.Y.
Chen, F.R.
Kai, J.J.
Lin, J.J.
關鍵字: field-effect transistors;electrical-transport;room-temperature;schottky diodes;thin-films;fabrication;growth
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 90, Issue 22.
摘要: 
Single crystalline ZnO nanowires (NWs) with a circular cross section and similar to 40 nm in diameter have been synthesized and utilized to fabricate two-contact ZnO NW devices. The electrical properties of the NW devices can be categorized into two classes according to the magnitude of their room-temperature resistances. I-V curves of low-resistance devices exhibit downward bending features and their temperature dependent resistances demonstrate thermal activation transport in the ZnO NWs. The high-resistance NW devices can be modeled as back-to-back Schottky contacts and the electron transport through the contacts reveals a variable-range-hopping mechanism. (C) 2007 American Institute of Physics.
URI: http://hdl.handle.net/11455/68034
ISSN: 0003-6951
DOI: 10.1063/1.2745648
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