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|標題:||Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers||作者:||Liu, P.C.
|關鍵字:||deformation-behavior;oxygen;silicon||Project:||Applied Physics Letters||期刊/報告no：:||Applied Physics Letters, Volume 85, Issue 21, Page(s) 4831-4833.||摘要:||
The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 degreesC. When temperatures increased above 400 degreesC, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 degreesC. (C) 2004 American Institute of Physics.
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