Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68036
標題: Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers
作者: Liu, P.C.
Lu, C.L.
Wu, Y.C.S.
Cheng, J.H.
Ouyang, H.
關鍵字: deformation-behavior;oxygen;silicon
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 85, Issue 21, Page(s) 4831-4833.
摘要: 
The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 degreesC. When temperatures increased above 400 degreesC, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 degreesC. (C) 2004 American Institute of Physics.
URI: http://hdl.handle.net/11455/68036
ISSN: 0003-6951
DOI: 10.1063/1.1823592
Appears in Collections:期刊論文

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